A memory device includes a first memory group including plural first non-volatile memory cells capable of storing multi-bit data, and a second memory group including plural second non-volatile memory cells capable of storing single-bit data. A program operation controller builds the multi-bit data based on data inputted from an external device, performs a logical operation regarding partial data among the multi-bit data to generate a parity, programs the parity in the second memory group after programming the partial data in the first memory group, perform a verification operation regarding the partial data after a sudden power-off (SPO) occurs, recovers the partial data based on the parity and a result of the verification operation, and programs recovered partial data in the first memory group.

A memory device may include: a memory bank comprising a first cell mat used as a normal area and a second cell mat used as a row hammer area and a redundancy area; a target address generation circuit suitable for: saving, in the row hammer area, a count of a received address for an active operation on the memory bank by performing an internal access operation on the row hammer area during the active operation, and setting, a particular count which satisfies a preset condition, an address corresponding to the particular count as a target address; a refresh control circuit suitable for controlling a smart refresh operation on the target address; and a column repair circuit suitable for repairing, when a bit line of the normal area has a defect, the bit line of the normal area with a bit line of the redundancy area.

A multi-chip package with reduced calibration time and an impedance control (ZQ) calibration method thereof are provided. A master chip of the multi-chip package performs a first ZQ calibration operation by using a ZQ resistor, and then, the other slave chips simultaneously perform second ZQ calibration operations with respect to data input/output (DQ) pads of the slave chips by using a termination resistance value of a DQ pad of the master chip on the basis of a one-to-one correspondence relationship with the DQ pad of the master chip. The multi-chip package completes ZQ calibration by performing two ZQ calibration operations, thereby decreasing a ZQ calibration time.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

A method for measuring asynchronous timestamp requests includes receiving a timestamp (“TS”) request from a client device during a first interval of a time of day (“TOD”) clock, and calculating, using the TOD clock, at a next interval of the TOD clock, a TS correction of the TS request relative to a reference point of the first TOD clock interval. The method further includes adding the TS correction to the reference point of the first interval of the TOD clock, and outputting the corrected TS to the client device.

The present technology relates to a semiconductor memory device and a method of operating the same. The semiconductor memory device includes a memory block including memory cells, a peripheral circuit configured to program the memory cells in a set program state during a test operation and perform a test erase voltage application operation on the memory cells programmed in the set program state, and control logic configured to control the peripheral circuit to count abnormal memory cells of which a threshold voltage is less than a set threshold voltage among the memory cells.

A latch circuit includes a plurality of latch sets, each including an enable latch and a plurality of address latches; and a plurality of latch-width adjusting circuits respectively corresponding to the latch sets, wherein, in each of the plurality of latch sets, the corresponding latch-width adjusting circuit is disposed between the enable latch of the corresponding latch set and the address latch adjacent to the enable latch, and couples the enable latch to the adjacent address latch depending on whether or not the corresponding latch set is used, at an end of a boot-up operation.

A memory system includes a memory device including plural non-volatile memory blocks and a controller configured to determine whether a first memory block among the plural non-volatile memory blocks is re-usable after the first memory block is determined to be a bad block and copy second block information associated with a second memory block including a second program sequence number within a set range of a first program sequence number in the first memory block to first block information of the first memory block.

A storage device includes a memory, a write circuit, a read circuit, and a debug information register. The memory includes a data area and a redundant area that corresponds to the data area. The write circuit writes first data specified in a write command to the data area, and first information about a transmission source which has transmitted the write command, to the redundant area. The read circuit reads the first data as second data from the data area, and reads the first information as second information from the redundant area, in response to a read command. The debug information register stores the second information read by the read circuit.

A fault handling apparatus and a fault handling method which perform a built-in self-test (BIST) and a repair on a static random-access memory (SRAM) cell, and the fault handling apparatus and the fault handling method store the fault and repair history information of a previous SRAM test, provide the information to a current test, and reflect both BIST results and the information on the previous test, thereby performing multiple repairs until there is no available spare SRAM.