This embodiment relates to a lifting or flying device using the energy from the radioactive decay of radioactive elements to accelerate an object. A thin radioactive coating is spread over a large surface area that allows most of the radiated particles to escape. The force from the decay of an unobstructed side A of a flattened or curved radioactive emitting device has enough energy to push an object toward its opposite side B expelling particles or waves at relativistic speeds in its exhaust if side B is covered by a shield that prevents most of the radiation from escaping that side. Trillions of small microscopic explosions per second per gram of radioactive material has enough energy from radioactive decay from alpha, beta, or gamma rays decaying to escape on A side which is much greater number of particles escaping than shielded side B imparting a force in in B direction.

A power battery using the energy from a radioactive material. The arrangement uses ZnO as a semiconductor, with energy generated a metal-semiconductor junction. The ZnO is arranged in thin layers. This allows for good durability and relatively high power production.

A power battery using the energy from a radioactive material. The arrangement uses ZnO as a semiconductor, with energy generated a metal-semiconductor junction. The ZnO is arranged in thin layers. This allows for good durability and relatively high power production.

A vacuum micro-electronics device that utilizes fissile material capable of using the existing neutron leakage from the fuel assemblies of a nuclear reactor to produce thermal energy to power the heater/cathode element of the vacuum micro-electronics device and a self-powered detector emitter to produce the voltage/current necessary to power the anode/plate terminal of the vacuum micro-electronics device.

A vacuum micro-electronics device that utilizes fissile material capable of using the existing neutron leakage from the fuel assemblies of a nuclear reactor to produce thermal energy to power the heater/cathode element of the vacuum micro-electronics device and a self-powered detector emitter to produce the voltage/current necessary to power the anode/plate terminal of the vacuum micro-electronics device.

According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions.

According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions.

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

An energy collection system may collect and use the energy generated by an electric field. Collection fibers are suspended from a support system. Radioactive material is placed on or near the collection fibers. The support system is electrically connected to a load by a connecting wire. The collection fibers may be made of any conducting material, but graphene, carbon and graphite are preferred. Diodes may be used to restrict the backflow or loss of energy.