The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15° from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15° from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.

A device for controlling trapped ions includes a substrate. A structured first metal layer is disposed over the substrate. The structured first metal layer forms electrodes of an ion trap configured to trap ions in a space above the structured first metal layer. The structured first metal layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive layer of a first material and a mechanical stabilization layer of a second material. The second material has an elastic modulus greater than the elastic modulus of the first material and/or the second material has a yield strength greater than the yield strength of the first material.

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

An interposer is described that is made from an electrically insulating, thermally efficient substrate (e.g., sapphire) and has a load hole for use with ion traps in atomic-based QIP architectures. The interposer load hole aligns with a load hole in the ion trap such that atomic species can be provided from the back of the interposer to the front of the ion trap for ionization and confinement. The interposer may include angled traces for wire bonding to the ion trap, where the angled traces enable more open light access when using laser or optical beams during operation of the ion trap. Electrical routing in the interposer may involve more than one layer of routing, separated by an insulating dielectric material such as a polyimide. Routing in the interposer may also contain active electronic components. The load hole in the interposer may have a straight or tapered inner wall.

A shaped central electrode is described that is placed between a pair of radio frequency (RF) rails of a trap configured to hold atomic-based qubits to control aspects of the operation of the trap. In one aspect, the shaping may involve forming a pinched region in the middle of the central electrode. The middle of the central electrode may correspond to the middle portion of the trap. The shaping of the central electrode may be achieved in different ways and may involve varying the width of the central electrode. The trap may be fabricated on a glass die or substrate, which itself may be shaped or not. The trap may be fabricated by various methods such as, but not limited to, patterned metal layers on glass or silicon substrates. A quantum information processing (QIP) system is also described that may include a trap having any of these features.

Aspects of the present disclosure may include a method and/or a system for identifying an ion chain having a plurality of trapped ions, selecting at least two non-consecutive trapped ions in the ion chain for implementing a qubit, applying at least a first Raman beam to shuttle at least one neighbor ion of the at least two non-consecutive trapped ions from a ground state to a metastable state, and applying at least a second Raman beam to one or more of the at least two non-consecutive trapped ions, after shuttling the at least one neighbor ion to the metastable state, to transition from a first manifold to a second manifold.

Techniques for the fabrication of electrodes and the shaping of glass dies or substrates are described to produce metal-on-glass ion traps. These ion traps may be configured to have open light access and high aspect trenches for the electrodes. For example, the glass substrate may be shaped to provide high numerical aperture (NA) light access by having angled cutouts, electrode structures with high aspect trenches, angled wire bonds for electrical connections, the angled wire bonds providing additional clear access by one or more laser beams, or a combination of any of these features. A quantum information processing (QIP) system is also described that may include an ion trap having any of these features.