A scintillator panel includes a substrate having a substrate main surface, a substrate rear surface, and a substrate side surface; and a scintillator layer having a scintillator rear surface formed of a plurality of columnar crystals, a scintillator main surface, and a scintillator side surface. The substrate side surface and the scintillator side surface are substantially flush with each other. In the substrate, an angle between the substrate rear surface and the substrate side surface is smaller than 90 degrees.

A scintillator panel includes a substrate having a substrate main surface, a substrate rear surface, and a substrate side surface; and a scintillator layer having a scintillator rear surface formed of a plurality of columnar crystals, a scintillator main surface, and a scintillator side surface. The substrate side surface and the scintillator side surface are substantially flush with each other. In the substrate, an angle between the substrate rear surface and the substrate side surface is smaller than 90 degrees.

Provided are a scintillator panel and an X-ray detector which have high sensitivity and sharpness. The scintillator panel includes a substrate and a scintillator layer containing a binder resin and a phosphor, wherein the scintillator panel further contains an organic compound having the maximum peak wavelength of light emission in the wavelength region of from 450 to 600 nm.

Provided are a scintillator panel and an X-ray detector which have high sensitivity and sharpness. The scintillator panel includes a substrate and a scintillator layer containing a binder resin and a phosphor, wherein the scintillator panel further contains an organic compound having the maximum peak wavelength of light emission in the wavelength region of from 450 to 600 nm.

A nanocrystal scintillator that contains a thin-film layer of perovskite-based quantum dots coated on a substrate layer. The quantum dots each have a formula of CsPbX.sub.aY.sub.3-a, CH.sub.3NH.sub.3PbX.sub.3, or NH.sub.2CH═NH.sub.2PbX.sub.3, in which each of X and Y, independently, is Cl, Br, or I, and a is 0-3. The substrate layer is an aluminum substrate, a fluoropolymer substrate, a fiber optic plate, a ceramic substrate, or a rubber substrate. Also disclosed are an ionizing radiation detector and an ionizing radiation imaging system containing such a nanocrystal scintillator.

Methods and systems for x-ray and fluoroscopic image capture and, in particular, to a versatile, multimode imaging system incorporating a hand-held x-ray emitter operative to capture digital or thermal images of a target; a stage operative to capture static x-ray and dynamic fluoroscopic images of the target; a system for the tracking and positioning of the x-ray emission; a device to automatically limit the field of the x-ray emission; and methods of use. Automatic systems to determine the correct technique factors for fluoroscopic and radiographic capture, ex-ante.

According to one embodiment, a radiation detector includes a photo-electric conversion substrate, a scintillator layer containing a main material and a dope material and a light reflective layer or a moisture barrier layer, formed on a front surface side of the scintillator layer along a shape of the front surface of the scintillator layer. The scintillator layer includes a mixed layer portion formed of the main material the dope material on the photo-electric conversion substrate, and a dope material layer portion formed of only the dope material on a front surface side of the mixed layer portion. A front surface of at least the dope material layer portion is formed into relatively coarse shape compared to the mixed layer portion.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1−x−z)X.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−Z)Ce.sub.2xZ.sub.2zSiO.sub.5+z/2O.sub.2↑ or (1−x−y−z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−y−z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/20.sub.2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.