There is provided an ion source device including a pair of first electrodes for emitting an electron, a second electrode that defines a region in which the electron is enclosed and to which raw material source gas is supplied, between the pair of first electrodes, and that has a hole portion through which an ion generated by collision between the electron and the material gas is extruded, an extraction electrode disposed apart from the second electrode along an extraction direction of the ion extracted from the second electrode so that a potential difference is formed between the second electrode and the extraction electrode, and an intermediate electrode disposed between the second electrode and the extraction electrode. A first potential difference between the second electrode and the intermediate electrode is greater than a second potential difference between the second electrode and the extraction electrode.

Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Aspects of the present disclosure describe techniques for using a parabolic Cassegrain-type reflector for ablation. For example, a system for ablation loading of a trap is described that includes a reflector having a hole aligned with a loading aperture of the trap, and an atomic source positioned at a focal point of the reflector, where one or more laser beams are reflected from a reflective front side of the reflector and focused on a surface of the atomic source to produce an atomic plume, and the atomic plume once produced passing through the hole in the reflector and through a loading aperture of the trap for loading the trap. A method for ablation loading of a trap within a chamber in a trapped ion system is also described.

Aspects of the present disclosure describe techniques for using a parabolic Cassegrain-type reflector for ablation. For example, a system for ablation loading of a trap is described that includes a reflector having a hole aligned with a loading aperture of the trap, and an atomic source positioned at a focal point of the reflector, where one or more laser beams are reflected from a reflective front side of the reflector and focused on a surface of the atomic source to produce an atomic plume, and the atomic plume once produced passing through the hole in the reflector and through a loading aperture of the trap for loading the trap. A method for ablation loading of a trap within a chamber in a trapped ion system is also described.

The present invention has as an object the provision of a light irradiation device capable of performing optical cleaning with high stability regardless of the transport speed of a workpiece.

The light irradiation device of the present invention emits ultraviolet light to one surface of a band-shaped workpiece transported along a transport path, and includes a lamp house having an opening along a passing plane on a side of the one surface of the workpiece in the transport path, an ultraviolet lamp provided in the lamp house so as to extend in a width direction of the workpiece, gas supplier configured to supply a treatment-space gas into the lamp house, and an exhaust space forming member having an opening along a passing plane on a side of the other surface of the workpiece in the transport path. The treatment-space gas is produced by mixing a gas containing oxygen and/or water with an inert gas serving as a principal component, and a shielding body for forming a gas circulation resistance bottleneck between the shielding body and each edge part of the workpiece is provided in the opening of the lamp house.

The present invention has as an object the provision of a light irradiation device capable of performing optical cleaning with high stability regardless of the transport speed of a workpiece.

The light irradiation device of the present invention emits ultraviolet light to one surface of a band-shaped workpiece transported along a transport path, and includes a lamp house having an opening along a passing plane on a side of the one surface of the workpiece in the transport path, an ultraviolet lamp provided in the lamp house so as to extend in a width direction of the workpiece, gas supplier configured to supply a treatment-space gas into the lamp house, and an exhaust space forming member having an opening along a passing plane on a side of the other surface of the workpiece in the transport path. The treatment-space gas is produced by mixing a gas containing oxygen and/or water with an inert gas serving as a principal component, and a shielding body for forming a gas circulation resistance bottleneck between the shielding body and each edge part of the workpiece is provided in the opening of the lamp house.

A method includes selecting a group of wafers, each of the wafers having a resist pattern; selecting a group of fields for each of the wafers; selecting one or more points on each of the fields; measuring overlay errors on the resist pattern at locations associated with the one or more points selected on the respective wafers; and generating a combined overlay correction map based on measurements of the overlay errors on the wafers. At least one of the selecting of the group of wafers, the selecting of the group of fields, and the selecting of the one or more points is based on a computer-generated model.

Plant eradication and stressing of plants using illumination trauma where a dual component, low energy, unnatural set of irradiances is applied, with no mutagenic or high radiative energy transfers in any wavelength for eradication by severe scalding, heat shock, or incineration. Two radiations are applied: an Indigo Region Illumination Distribution that can extend from 300 nm to 550 nm to be directed to plant foliage and/or a plant root crown, and a Medium Wavelength Infrared distribution of light, ranging from 2-20 microns wavelength to be directed to the ground, to a plant root crown and/or soil immediately adjacent the root crown. Plants can include seeds, and seedlings, and biomass can be irradiated to control weed seeds such as from a combine. The Indigo Region Illumination Distribution can pass through the MWIR emitter to form a compact illuminator. The MWIR emitter can comprise borosilicate glass at 400 F to 1000 F.