There is provided an ion source device including a pair of first electrodes for emitting an electron, a second electrode that defines a region in which the electron is enclosed and to which raw material source gas is supplied, between the pair of first electrodes, and that has a hole portion through which an ion generated by collision between the electron and the material gas is extruded, an extraction electrode disposed apart from the second electrode along an extraction direction of the ion extracted from the second electrode so that a potential difference is formed between the second electrode and the extraction electrode, and an intermediate electrode disposed between the second electrode and the extraction electrode. A first potential difference between the second electrode and the intermediate electrode is greater than a second potential difference between the second electrode and the extraction electrode.

Provided is a photocathode kit that does not require adjustment of the distance between a photocathode film and a lens focusing on the photocathode film when the photocathode and the lens are installed inside an electron gun. The photocathode kit includes: a photocathode including a substrate in which a photocathode film is formed on a first surface; a lens; and a holder that holds the substrate and the lens, and the holder has a retaining member that retains the photocathode film and the lens to be spaced apart by a predetermined distance, and a first communication path that communicates between inside of the holder and outside of the holder.

Presented systems and methods facilitate efficient and effective generation and delivery of radiation. A radiation generation system can comprise: a particle beam gun, a high energy dissipation anode target (HEDAT); and a liquid anode control component. In some embodiments, the particle beam gun generates an electron beam. The HEDAT includes a solid anode portion (HEDAT-SAP) and a liquid anode portion (HEDAT-LAP) that are configured to receive the electron beam, absorb energy from the electron beam, generate a radiation beam, and dissipate heat. The radiation beam can include photons that can have radiation characteristics (e.g., X-ray wavelength, ionizing capability, etc.). The liquid anode control component can control a liquid anode flow to the HEDAT. The HEDAT-SAP and HEDAT-LAP can cooperatively operate in radiation generation and their configuration can be selected based upon contribution of respective HEDAT-SAP and the HEDAT-LAP characteristics to radiation generation.

Plant eradication and stressing of plants using illumination signaling where a short-time dual component, low energy, unnatural set of irradiances is applied, with no mutagenic or high radiative energy transfers in any wavelength for eradication by substantial high temperature thermally-induced leaf and plant component failure or incineration. An Indigo Region Illumination Distribution of wavelength 300 nm to 550 nm is directed to plant foliage and/or a plant root crown, while infrared radiation that is substantially Medium Wavelength Infrared radiation of 2-20 microns wavelength, 2.4-8.0 microns preferred, is directed to a plant root crown and/or soil immediately adjacent the root crown. The Indigo Region Illumination Distribution can pass through the MWIR emitter to form a compact illuminator. The MWIR emitter can comprise borosilicate glass at 400° F. to 1000° F.

Plant eradication and stressing of plants using illumination signaling where a short-time dual component, low energy, unnatural set of irradiances is applied, with no mutagenic or high radiative energy transfers in any wavelength for eradication by substantial high temperature thermally-induced leaf and plant component failure or incineration. An Indigo Region Illumination Distribution of wavelength 300 nm to 550 nm is directed to plant foliage and/or a plant root crown, while infrared radiation that is substantially Medium Wavelength Infrared radiation of 2-20 microns wavelength, 2.4-8.0 microns preferred, is directed to a plant root crown and/or soil immediately adjacent the root crown. The Indigo Region Illumination Distribution can pass through the MWIR emitter to form a compact illuminator. The MWIR emitter can comprise borosilicate glass at 400° F. to 1000° F.

Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.

The device is for curing a coating substance inside a pipe. The device has a flexible shaft inside a duct, an air inlet channel within the duct, a body configured to be attached to the duct, a heat sink in connection with the body and defining a plurality of cooling channels which are in fluid connection with the air inlet channel. The device further has a plurality of light emitting devices configured to be cooled by the heat sink. The device further has an air outlet channel in fluid connection with the cooling channels of the heat sink. The air outlet channel exits the body from the same side of the body as the air inlet channel enters the body.

A linear accelerator target apparatus includes a target material to produce radiation upon being struck by electrons accelerated by a linear accelerator and a target holder assembly to which the target material is attached. The target holder assembly includes a cooling channel disposed around a perimeter of the target material. The target holder assembly is configured to be detachably coupled to a housing of the linear accelerator. The target apparatus further includes a protective window coupled to the target holder assembly over the target material.