Patent classifications
G21K7/00
X-RAY MICROSCOPE
To provide an X-ray microscope that has a size small enough to be brought into a room by shortening the path length, an X-ray microscope including at least one of each of an X-ray source 1, a sample holding part 3, a concave KB mirror 4, a convex KB mirror 5, and a light receiving part 8 located at a position in an imaging relation to a position of the sample holding part 3 in this order along an optical axis is fabricated.
X-RAY MICROSCOPE
To provide an X-ray microscope that has a size small enough to be brought into a room by shortening the path length, an X-ray microscope including at least one of each of an X-ray source 1, a sample holding part 3, a concave KB mirror 4, a convex KB mirror 5, and a light receiving part 8 located at a position in an imaging relation to a position of the sample holding part 3 in this order along an optical axis is fabricated.
TALBOT X-RAY MICROSCOPE
Systems for x-ray microscopy using an array of micro-beams having a micro- or nano-scale beam intensity profile to provide selective illumination of micro- or nano-scale regions of an object. An array detector is positioned such that each pixel of the detector only detects x-rays corresponding to a single micro-or nano-beam. This allows the signal arising from each x-ray detector pixel to be identified with the specific, limited micro- or nano-scale region illuminated, allowing sampled transmission image of the object at a micro- or nano-scale to be generated while using a detector with pixels having a larger size and scale. Detectors with higher quantum efficiency may therefore be used, since the lateral resolution is provided solely by the dimensions of the micro- or nano-beams. The micro- or nano-scale beams may be generated using a arrayed x-ray source and a set of Talbot interference fringes.
TALBOT X-RAY MICROSCOPE
Systems for x-ray microscopy using an array of micro-beams having a micro- or nano-scale beam intensity profile to provide selective illumination of micro- or nano-scale regions of an object. An array detector is positioned such that each pixel of the detector only detects x-rays corresponding to a single micro-or nano-beam. This allows the signal arising from each x-ray detector pixel to be identified with the specific, limited micro- or nano-scale region illuminated, allowing sampled transmission image of the object at a micro- or nano-scale to be generated while using a detector with pixels having a larger size and scale. Detectors with higher quantum efficiency may therefore be used, since the lateral resolution is provided solely by the dimensions of the micro- or nano-beams. The micro- or nano-scale beams may be generated using a arrayed x-ray source and a set of Talbot interference fringes.
Method for three-dimensionally measuring a 3D aerial image of a lithography mask
In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.
Semiconductor X-ray detector
Disclosed herein is an apparatus for detecting X-ray. The apparatus has an X-ray absorption layer with an electrode, one or more voltage comparators configured to compare a voltage of the electrode to one or more thresholds, a counter configured to register the number of X-ray photons absorbed by the X-ray absorption layer, and a controller.
Semiconductor X-ray Detector
Disclosed herein is an apparatus comprising: a radiation absorption layer comprising an electrode; a counter configured to register a number of radiation particles absorbed by the radiation absorption layer; a controller configured to start a time delay from a time at which an absolute value of an electrical signal on the electrode equals or exceeds an absolute value of a first threshold; a comparator configured to compare the electrical signal to a second threshold; wherein the controller is configured to activate the comparator during the time delay; wherein the controller is configured to cause the number registered by the counter to change, if the comparator determines that an absolute value of the electrical signal equals or exceeds an absolute value of the second threshold.
Illumination optical unit for a mask inspection system and mask inspection system with such an illumination optical unit
An illumination optical unit for a mask inspection system is used with EUV illumination light. A hollow waveguide of the illumination optical unit serves for guiding the illumination light. The hollow waveguide has an entry opening for the illumination light and an exit opening for the illumination light. An imaging mirror optical unit, arranged downstream of the hollow waveguide serves to image the exit opening into an illumination field. This results in an illumination optical unit, the throughput of which is optimized for the EUV illumination light.
Illumination optical unit for a mask inspection system and mask inspection system with such an illumination optical unit
An illumination optical unit for a mask inspection system is used with EUV illumination light. A hollow waveguide of the illumination optical unit serves for guiding the illumination light. The hollow waveguide has an entry opening for the illumination light and an exit opening for the illumination light. An imaging mirror optical unit, arranged downstream of the hollow waveguide serves to image the exit opening into an illumination field. This results in an illumination optical unit, the throughput of which is optimized for the EUV illumination light.
STATISTICAL ANALYSIS IN X-RAY IMAGING
A method of analyzing a specimen using X-rays, comprising the steps of: Irradiating the specimen with input X-rays; Using a detector to detect a flux of output X-rays emanating from the specimen in response to said irradiation,
which method further comprises the following steps: Using the detector to intercept at least a portion of said flux so as to produce a set {I.sub.j} of pixeled images I.sub.j of at least part of the specimen, whereby the cardinality of the set {I.sub.j} is M>1. For each pixel p.sub.iin each image I.sub.j, determining the accumulated signal strength S.sub.ij, thus producing an associated set of signal strengths {S.sub.ij}. Using the set {S.sub.ij} to calculate the following values: A mean signal strength S per pixel position i; A variance .sup.2.sub.S in S per pixel position i. Using these values S and .sup.2.sub.S to produce a map of mean X-ray photon energy E per pixel.