There is provided an inexpensive silver particle dispersing solution being usable as a slurry for ink jet, a method for producing the same, and a method for producing a conductive film using the silver particle dispersing solution. In a silver particle dispersing solution containing a silver powder and a solvent, the silver powder has an average primary particle diameter (D.sub.SEM) of 0.15 to 0.5 μm, and the ratio (D.sub.50/D.sub.SEM) of a particle diameter (D.sub.50), which corresponds to 50% of accumulation in volume-based cumulative distribution of the silver powder, to the average primary particle diameter (D.sub.SEM) is not less than 1.7, the silver powder having a fatty acid adhered to the surface thereof, and the solvent containing a monohydric higher alcohol having a carbon number of 6 to 12, butyl carbitol or butyl carbitol acetate as the main component thereof.

The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body.

Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body.

Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.

The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.

The present invention discloses a metal composite wire capable of increasing a tightness degree of copper-aluminum bonding. The metal composite wire includes a metal core rod. Continuous spiral grooves are formed in a surface of the core rod. The core rod is cladded with a metal cladding layer with higher electrical conductivity than the core rod. An average depth of the continuous spiral grooves ≤1/10 of a thickness of the metal cladding layer. By setting the thickness of the metal cladding layer as t.sub.1, a specific gravity of the metal cladding layer as ρ.sub.1, a diameter of the core rod as R, the average depth of the continuous spiral grooves as h, and a specific gravity of the core rod as ρ.sub.2, $t_1=\sqrt{\frac{{\left(R-h\right)}^2\times {\rho }_1+k\times {\left(R-h\right)}^2\times {\rho }_2-k\times {\left(R-h\right)}^2\times {\rho }_1}{(}}$

The present invention discloses a metal composite wire capable of increasing a tightness degree of copper-aluminum bonding. The metal composite wire includes a metal core rod. Continuous spiral grooves are formed in a surface of the core rod. The core rod is cladded with a metal cladding layer with higher electrical conductivity than the core rod. An average depth of the continuous spiral grooves ≤1/10 of a thickness of the metal cladding layer. By setting the thickness of the metal cladding layer as t.sub.1, a specific gravity of the metal cladding layer as ρ.sub.1, a diameter of the core rod as R, the average depth of the continuous spiral grooves as h, and a specific gravity of the core rod as ρ.sub.2, $t_1=\sqrt{\frac{{\left(R-h\right)}^2\times {\rho }_1+k\times {\left(R-h\right)}^2\times {\rho }_2-k\times {\left(R-h\right)}^2\times {\rho }_1}{(}}$

Disclosed are a method of manufacturing a solid electrolyte, a solid electrolyte manufactured using the method, and an all-solid cell including the solid electrolyte. The method includes preparing an electrolyte admixture including a solid electrolyte precursor and a solvent, drying the electrolyte admixture and removing the solvent from the electrolyte admixture to form a dry electrolyte mixture, and heat-treating the dry electrolyte mixture to form a crystallized solid electrolyte.

Disclosed are a method of manufacturing a solid electrolyte, a solid electrolyte manufactured using the method, and an all-solid cell including the solid electrolyte. The method includes preparing an electrolyte admixture including a solid electrolyte precursor and a solvent, drying the electrolyte admixture and removing the solvent from the electrolyte admixture to form a dry electrolyte mixture, and heat-treating the dry electrolyte mixture to form a crystallized solid electrolyte.

A system and method of additively manufacturing a part including electrically conductive or static dissipating fluorine-containing polymers. The method includes depositing fluorine-containing polymer additive manufacturing material onto a build platform, selectively cross-linking portions of the deposited additive manufacturing material, and curing the selectively cross-linked portions such that the part is at least one of electrically conductive and static dissipating.