The present invention relates to a metal wiring, to be formed on a flexible substrate, including a sintered body of silver particles. The sintered body constituting the metal wiring has a volume resistivity of 20 μΩ.Math.cm or less, hardness of 0.38 GPa or less, and a Young's modulus of 7.0 GPa or less. A conductive sheet provided with the metal wiring can be produced by applying/calcinating, on a substrate, a metal paste containing, as a solid content, silver particles having prescribed particle size and particle size distribution, and further containing, as a conditioner, an ethyl cellulose having a number average molecular weight of 10,000 or more and 90,000 or less. The metal wiring of the present invention is excellent in bending resistance with change in electrical characteristics suppressed even through repetitive bending deformation.

A method for manufacturing an insert-molded bus bar includes the steps of: preparing a first bus bar having a through hole and a second bus bar having a protrusion corresponding to the through hole; preparing a mold having therein a swaging member capable of swaging the protrusion; placing the first and second bus bars in the mold with the protrusion being inserted into the through hole; swaging the first and second bus bars using the swaging member of the mold to obtain connected bus bars that are the bus bars connected to each other; and injecting a molding material around the connected bus bars that are the bus bars connected to each other by swaging to perform insert molding using the mold and obtain the insert-molded bus bar.

A silver nanowire (SNW) protection layer structure includes a substrate; a SNW layer, disposed on the substrate and covering only a partial region of a surface of the substrate, the SNW layer including a plurality of SNW channels; and a SNW protection layer, disposed on the SNW layer and covering a region corresponding to the plurality of SNW channels, the SNW protection layer including a light-resistant antioxidant. A manufacturing method for the SNW protection layer structure above is further provided. The SNW protection layer structure and the manufacturing method thereof are applicable in a touch sensor.

Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers are cheap and easy to synthesize, and can exhibit good solubility and great solution processibility, and that enable highly efficient OPVs.

A conductive particle including a conductive powder, a conductive polymer composition, and an anisotropic conductive sheet, each of which has a particularly smaller volume resistivity and better conductivity than those of the related art, and is desirably inexpensive. A conductive particle includes a first plating layer (pure Ni plating layer or Ni plating layer containing 4.0 mass % or less of P) covering the surface of a spherical Ni core containing 5 mass % to 15 mass % or less of P. The conductive particle may further include a Au plating layer having a thickness of from 5 nm to 200 nm and covering the surface of the first plating layer.

Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

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The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as the semiconducting material for use in formulations for organic thin film-transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

When measuring the molecular mass distribution of conductive aniline polymer of formula (1) by GPC and converting its retention time into molecular mass (M) in terms of sodium polystyrene sulfonate, for the molecular mass (M), the area ratio (X/Y) of the area (X) of a region of 15,000 Da or more to the area (Y) of a region of less than 15,000 Da is 1.20 or more. A method for producing such a polymer includes: polymerization step (Z1) where specific aniline derivative (A) is polymerized in a solution containing basic compound (B), solvent (C), and oxidizing agent (D) at a liquid temperature lower than 25° C.; or polymerization step (Z2) where specific aniline derivative (A) and oxidizing agent (D) are added to and polymerized in a solution of a conductive aniline polymer (P-1) with a unit of formula (1) dissolved or dispersed in a solvent (C). ##STR00001##

A method for preparing a conjugated polymer involves a DHAP polymerization of a 3,4-dioxythiophene, 3,4-dioxyfuran, or 3,4-dioxypyrrole and, optionally, at least one second conjugated monomer in the presence of a Pd or Ni comprising catalyst, an aprotic solvent, a carboxylic acid at a temperature in excess of 120° C. At least one of the monomers is substituted with hydrogen reactive functionalities and at least one of the monomers is substituted with a Cl, Br, and/or I. The polymerization can be carried out at temperature of 140° C. or more, and the DHAP polymerization can be carried out without a phosphine ligand or a phase transfer agent. The resulting polymer can display dispersity less than 2 and have a degree of polymerization in excess of 10.

A method for preparing a conjugated polymer involves a DHAP polymerization of a 3,4-dioxythiophene, 3,4-dioxyfuran, or 3,4-dioxypyrrole and, optionally, at least one second conjugated monomer in the presence of a Pd or Ni comprising catalyst, an aprotic solvent, a carboxylic acid at a temperature in excess of 120° C. At least one of the monomers is substituted with hydrogen reactive functionalities and at least one of the monomers is substituted with a Cl, Br, and/or I. The polymerization can be carried out at temperature of 140° C. or more, and the DHAP polymerization can be carried out without a phosphine ligand or a phase transfer agent. The resulting polymer can display dispersity less than 2 and have a degree of polymerization in excess of 10.