A resistor includes a resistive element, an insulation plate, a protective film, and a pair of electrodes. The resistive element includes a first face and a second face arranged to face in opposite directions in a thickness direction. The insulation plate is on the first face, and the protective film on the second face. The electrodes are spaced apart in a first direction perpendicular to the thickness direction, and held in contact with the resistive element. Each electrode includes a bottom portion opposite to the insulation plate with respect to the resistive element in the thickness direction. Each bottom portion overlaps with a part of the protective film as viewed in the thickness direction. The resistor further includes a pair of intermediate layers spaced apart in the first direction. The intermediate layers are formed of a material electrically conductive and containing a synthetic resin. Each intermediate layer includes a cover portion covering a part of the protective film. The cover portion of each intermediate layer is disposed between the protective film and the bottom portion of one of the electrodes.

A resistor includes a resistive element, an insulation plate, a protective film, and a pair of electrodes. The resistive element includes a first face and a second face arranged to face in opposite directions in a thickness direction. The insulation plate is on the first face, and the protective film on the second face. The electrodes are spaced apart in a first direction perpendicular to the thickness direction, and held in contact with the resistive element. Each electrode includes a bottom portion opposite to the insulation plate with respect to the resistive element in the thickness direction. Each bottom portion overlaps with a part of the protective film as viewed in the thickness direction. The resistor further includes a pair of intermediate layers spaced apart in the first direction. The intermediate layers are formed of a material electrically conductive and containing a synthetic resin. Each intermediate layer includes a cover portion covering a part of the protective film. The cover portion of each intermediate layer is disposed between the protective film and the bottom portion of one of the electrodes.

The resistive material for sensing current contains: metal particles selected from a group consisting of nichrome, copper-manganese, and copper-nickel; insulating particles selected from a group consisting of alumina, aluminum nitride, silicon nitride, and zirconia; and titanium oxide.

A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

A thin film resistor (TFR) module may be formed in copper interconnect in an integrated circuit device. A pair of displacement-plated TFR heads may be formed by forming a pair of copper TFR head elements (e.g., damascene trench elements) spaced apart from each other in a dielectric region, and displacement plating a barrier region on each TFR head element to form a displacement-plated TFR head. A TFR element may be formed on the pair of displacement-plated TFR heads to define a conductive path between the pair of TFR head elements through the TFR element and through the displacement-plated barrier region on each metal TFR head. Conductive contacts may be formed connected to the pair of displacement-plated TFR heads. The displacement-plated barrier regions may protect the copper TFR heads from copper corrosion and/or diffusion, and may comprise CoWP, CoWB, Pd, CoP, Ni, Co, Ni—Co alloy, or other suitable material.

According to some aspects of the present disclosure, power modules having current sensing circuits, and corresponding sensing methods, are disclosed. Example power modules include a printed circuit board (PCB) having a PCB trace, a first sense terminal coupled to the PCB trace at a first location, and a second sense terminal coupled to the PCB trace at a second location such that a resistance between the first and second sense terminals is defined by a resistance of the PCB trace between the first location and the second location. The power module further comprises a control coupled to the first sense terminal and the second sense terminal, the control adapted to measure a voltage between the first sense terminal and the second sense terminal and determine a current through the PCB trace based on the measured voltage and the resistance between the first sense terminal and the second sense terminal.

A resistor includes a resistor main body, and a resin portion covering the resistor main body. The resin portion includes a radiation fin.

The present invention relates to a component which comprises a main body (9) and at least one external electrode (1) which is fastened by a connecting material (4) to the main body (9), wherein the main body (9) and the external electrode (1) have different coefficients of thermal expansion which determine a critical temperature which when exceeded results in a connection between the main body (9) and the external electrode (1) experiencing mechanical stresses which lead to damage to the component, wherein the connecting material (4) has a melting point which is lower than a critical temperature.

The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.

An integrated circuit includes: a resistor terminal adapted to be coupled to a first end of a first resistor; a ground terminal adapted to be coupled to a second end of the first resistor; a second resistor in series with the first resistor and having a first end and a second end, the second end coupled to the resistor terminal; a first capacitor having a first capacitor terminal and a second capacitor terminal, the first capacitor terminal is coupled to: the first end of the second resistor via a first switch; and the ground terminal via a second switch; a second capacitor having a third capacitor terminal and a fourth capacitor terminal, the third capacitor terminal is coupled to: the first end of the second resistor via a third switch; the resistor terminal via a fourth switch; and the ground terminal via a fifth switch.