A method of manufacturing a sensor include depositing a metal layer on a substrate and fabricating a calibration structure on the metal layer. The calibration structure can include a first calibration portion and a second calibration portion. The method may further include, performing a first calibration of the sensor by modifying the first calibration portion. In addition, the method can include placing a cover layer on a portion of the first calibration portion after the first calibration and then performing a second calibration of the sensor by modifying the second calibration.

Techniques regarding determining device operability via a metal-induced layer exchange are provided. For example, one or more embodiments described herein can comprise an apparatus, which can comprise a dielectric membrane positioned between an amorphous semiconductor resistor layer and an electrically conductive metal layer. The dielectric membrane can facilitate a metal induced layer exchange that can experiences catalyzation by heat generated from operation of a semiconductor device positioned adjacent to the apparatus.

Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ.Math.m.

A thin film resistor is provided, and a resistance layer of the thin film resistor is a patternized mesh. The mesh density of the mesh resistance layer increases from center to both ends of the film resistor. The temperature peak is shifted from the center to both ends of the film resistor. Therefore, the heat can be quickly dissipated via the electrodes.

The present disclosure relates to semiconductor structures and, more particularly, to a thin film resistor and methods of manufacture. A structure includes: a thin film resistor having an opening and being between an upper insulator material and a lower insulator material; and a contact extending through the opening in the thin film resistor and into the lower insulator material.

According to an aspect, there is provided a printed circuit board-based resistive device. The resistive device comprises, arranged on a substrate of the printed circuit board of the printed circuit board: a first conductive pad; a second conductive pad; a resistive patch having a first longitudinal end connected to the first conductive pad and a second longitudinal end connected to the second conductive pad, wherein a width of the resistive patch varies along a length of the resistive patch and has a maximum at a point between the first and second longitudinal ends.

In a multilayer ceramic electronic component, a first auxiliary electrode layer spaced away from a second internal electrode layer and exposed to a first end surface is on a same plane as a ceramic layer on which the second internal electrode layer is located, a second auxiliary electrode layer spaced away from a first internal electrode layer and exposed to a second end surface is on a same plane as the ceramic layer on which the first internal electrode layer is located, a first via conductor is at a central portion in a width direction of the first internal electrode layer and the first auxiliary electrode layer and exposed to the first end surface, and a second via conductor is at a central portion in a width direction of the second internal electrode layer and the second auxiliary electrode layer and exposed to the second end surface.

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10.sup.−6/K at 100° C. with reference to 25° C.

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to −36×10.sup.−6/K at 100° C. with reference to 25° C.

According to an aspect, there is provided a printed circuit board-based resistive device. The resistive device comprises, arranged on a substrate of the printed circuit board of the printed circuit board: a first conductive pad; a second conductive pad; a resistive patch having a first longitudinal end connected to the first conductive pad and a second longitudinal end connected to the second conductive pad, wherein a width of the resistive patch varies along a length of the resistive patch and has a maximum at a point between the first and second longitudinal ends.