A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

A chip resistor includes a resistive element, a first conductive underlying layer, a second conductive underlying layer, a first electrode, and a second electrode. The first electrode includes a first electrode layer. The second electrode includes a second electrode layer. A first electrical resistivity of the first conductive underlying layer is higher than a second electrical resistivity of the first electrode layer and higher than a third electrical resistivity of the resistive element. A fourth electrical resistivity of the second conductive underlying layer is higher than a fifth electrical resistivity of the second electrode layer and higher than the third electrical resistivity of the resistive element.

A chip resistor includes a resistive element, a first conductive underlying layer, a second conductive underlying layer, a first electrode, and a second electrode. The first electrode includes a first electrode layer. The second electrode includes a second electrode layer. A first electrical resistivity of the first conductive underlying layer is higher than a second electrical resistivity of the first electrode layer and higher than a third electrical resistivity of the resistive element. A fourth electrical resistivity of the second conductive underlying layer is higher than a fifth electrical resistivity of the second electrode layer and higher than the third electrical resistivity of the resistive element.

A plug-in device and a power conversion apparatus are provided. The plug-in device includes a housing, a connector and a temperature acquisition device. The housing is defined with a holding cavity. The connector includes a clamping part and a fixed connection part. The clamping part is arranged in the holding cavity. The fixed connection part partially extends out of the housing. The clamping part is configured to clamp a power conversion device. The fixed connection part is connected to a reactor. The temperature acquisition device is arranged close to the connector, and is configured to acquire a temperature at an overlapping point of the power conversion device and the clamping part.

A semiconductor device includes first and second interlayer insulating films, first and second wirings, and a resistor film. The first wiring is disposed on the first interlayer insulating film. The second interlayer insulating film includes a first layer and a second layer. The first layer is disposed on the first interlayer insulating film so as to cover the first wiring. The resistor film is disposed on the first layer. The resistor film contains at least one selected from the group consisting of silicon chromium, silicon chromium into which carbon is introduced, nickel chromium, titanium nitride and tantalum nitride. The second layer is disposed on the first layer so as to cover the resistor film. The second wiring is disposed on the second layer. The resistor film is closer to the first wiring than to the second wiring in a thickness direction of the second interlayer insulating film.

A thin film resistor (TFR) module may be formed in copper interconnect in an integrated circuit device. A pair of displacement-plated TFR heads may be formed by forming a pair of copper TFR head elements (e.g., damascene trench elements) spaced apart from each other in a dielectric region, and displacement plating a barrier region on each TFR head element to form a displacement-plated TFR head. A TFR element may be formed on the pair of displacement-plated TFR heads to define a conductive path between the pair of TFR head elements through the TFR element and through the displacement-plated barrier region on each metal TFR head. Conductive contacts may be formed connected to the pair of displacement-plated TFR heads. The displacement-plated barrier regions may protect the copper TFR heads from copper corrosion and/or diffusion, and may comprise CoWP, CoWB, Pd, CoP, Ni, Co, Ni—Co alloy, or other suitable material.

A thin-film resistor (TFR) module is formed in an integrated circuit device. The TFR module includes a pair of metal TFR heads (e.g., copper damascene trench structures), a TFR element formed directly on the metal TFR heads to define a conductive path between the pair of TFR heads through the TFR element, and TFR contacts connected to the TFR heads. The TFR heads may be formed in a metal interconnect layer, along with various interconnect elements of the integrated circuit device. The TFR element may be formed by depositing and patterning a TFR element/diffusion barrier layer over the TFR heads and interconnect elements formed in the metal interconnect layer. The TFR element may be formed from a material that also provides a barrier against metal diffusion (e.g., copper diffusion) from each metal TFR head and interconnect element. For example, the TFR element may be formed from tantalum nitride (TaN).

A buried thermistor includes a lower substrate, an upper substrate, and a number of thermistor stacks. Each thermistor stack includes two resistor subjects. Each resistor subject includes a base layer, a medium layer, a metal layer, a resistor layer, a nanometal layer, and a conductive layer. Applicable material of the resistor layer becomes more diverse by disposing the number of thermistor stacks, and the buried thermistor shows variable thermal sensitivity.

A CTI mobile device includes a first physical layer of electronic components adapted to fit in a first rectangular housing, the components adapted in aggregate to function as a mobile CTI communications device capable of accessing a wireless mobile network, and a second physical layer of electronic components adapted to fit in a second rectangular housing, the components adapted in aggregate to function as a mobile smart card capable of accessing a financial network to perform transactions and manage accounts, the first and second housings adapted to be coupled, and a plurality of contact pads distributed in like number and geometric pattern to interfacing sides of the first and second housings, the contact pads magnetized to attract opposing contact pads to couple the first and second housings together along the interfacing sides.

A CTI mobile device includes a first physical layer of electronic components adapted to fit in a first rectangular housing, the components adapted in aggregate to function as a mobile CTI communications device capable of accessing a wireless mobile network, and a second physical layer of electronic components adapted to fit in a second rectangular housing, the components adapted in aggregate to function as a mobile smart card capable of accessing a financial network to perform transactions and manage accounts, the first and second housings adapted to be coupled, and a plurality of contact pads distributed in like number and geometric pattern to interfacing sides of the first and second housings, the contact pads magnetized to attract opposing contact pads to couple the first and second housings together along the interfacing sides.