Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

A thermistor-based thermal probe includes a thermistor die having a thermistor thereon with first and second bond pads coupled across the thermistor, and first and second die interconnects coupled to the respective bond pads. First and second wires W1, W2 that extend beyond the thermistor die are attached to the first and to the second die interconnects, respectively. An encapsulant material encapsulates the thermistor die and a die end of the first and second wires.

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

An electronic component of the present disclosure includes a first insulating layer that includes impurities, a thin film resistor formed on the first insulating layer, and a barrier layer that is formed in at least one part of a region between the thin film resistor and the first insulating layer and that obstructs transmission of the impurities. The first insulating layer includes a first surface and a concave portion that is hollowed with respect to the first surface, and the barrier layer may include a first part embedded in the concave portion and a second part formed along the first surface of the first insulating layer from an upper area of the first part.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; a pair of wiring patterns formed on the substrate and electrically connected to both ends of the resistor; and a pair of electrodes formed on the substrate and electrically connected to the pair of wiring patterns, respectively. The wiring patterns include a first layer extending from the resistor, and a second layer having a lower resistance than the first layer and layered on the first layer. On the substrate, an electronic component mounting area is demarcated, on which an electronic component electrically connected to the electrodes is mounted.

A strain gauge includes a flexible substrate; and resistors each formed of a Cr composite film. The resistors include a first resistor and a second resistor that are formed on one side of the substrate, and include a third resistor and a fourth resistor that are formed on another side of the substrate. The first resistor, the second resistor, the third resistor, and the fourth resistor constitute a Wheatstone bridge circuit.

A sensor assembly for a resistance temperature sensor element includes a substrate and a measuring structure disposed on the substrate. The substrate includes a first material and a stabilized second material. The first material is at least one of aluminum oxide, spinel (magnesium aluminate) and yttrium-aluminum-garnet. The stabilized second material is at least one of stabilized zirconium dioxide and stabilized hafnium dioxide. The stabilized second material is stabilized by containing an oxide of an element having a valence different from four. A coefficient of thermal expansion of the substrate deviates by less than 5% from a coefficient of thermal expansion of the measuring structure.

A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor. The insulating layer has a penetrating portion. The first conductive film is formed in the penetrating portion such that a recess is formed at an upper part of the penetration portion. The second conductive film is formed on an upper surface of the first conductive film and an inner surface of the penetrating portion. The thin-film resistor includes silicon and metal. The thin-film resistor is formed on the second conductive film and the insulating layer.