A chip resistor component, includes: a substrate having one surface, and one side surface and the other side surface facing each other in one direction; an terminal including an internal electrode disposed on the one surface, and an external electrode disposed on the one side surface to be connected to the internal electrode; a resistive layer disposed on the one surface, and including an outermost pattern connected to the internal electrode; and a protective layer disposed on the one surface to cover the resistive layer. The outermost pattern of the resistive layer has a first region in contact with the internal electrode and a second region extending, in the one direction, from the first region towards the other side surface. A ratio of a length of the second region in the one direction to a length of the chip resistor component in the one direction is 0.02 or more.

Particularly, it is an object to provide a circuit substrate that can reduce a field intensity near an electrode having a high potential. A circuit substrate of the present invention includes an insulated substrate, a thin-film resistive element, and electrodes electrically connected to both sides of the thin-film resistive element, the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate. The circuit substrate is characterized in that the thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, and a dummy wire for reducing a field intensity is provided on a high-potential electrode side.

The present invention relates a shunt resistor and a shunt resistance device. The shunt resistor (1) includes an electrode member (10). The electrode member (10) includes a contact portion (10a) contacting a resistance element (5), and a slit (20) formed on the contact portion (10a).

An integrated circuit includes: a resistor terminal adapted to be coupled to a first end of a first resistor; a ground terminal adapted to be coupled to a second end of the first resistor; a second resistor in series with the first resistor and having a first end and a second end, the second end coupled to the resistor terminal; a first capacitor having a first capacitor terminal and a second capacitor terminal, the first capacitor terminal is coupled to: the first end of the second resistor via a first switch; and the ground terminal via a second switch; a second capacitor having a third capacitor terminal and a fourth capacitor terminal, the third capacitor terminal is coupled to: the first end of the second resistor via a third switch; the resistor terminal via a fourth switch; and the ground terminal via a fifth switch.

An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.

An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.

A thin-film resistor and a method for fabricating a thin-film resistor are provided. The thin-film resistor comprises a first terminal, a second terminal, and a resistor body providing a resistive current path between the first terminal and the second terminal, and the method comprises depositing a first layer of conductive material onto at least one of the supporting structure and the resistor body, applying a first lithographic mask to the first layer, and etching the first layer to form the first terminal; and depositing a second layer of conductive material onto at least one of the supporting structure and the resistor body, applying a second lithographic mask to the second layer, and etching the second layer to form the second terminal, wherein the first lithographic mask is different to the second lithographic mask, and a lateral separation of the first terminal and the second terminal is less than an in-plane minimum feature size of the first and second lithographic masks

A thin-film integrated circuit comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor is provided. A semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material, and a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties.

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

An inrush current limiting circuit in aspects of the present disclosure may have one or more of the following features: a printed circuit board, an electrical input disposed on the circuit board, one or more electrical outputs disposed on the circuit board, a current limiting circuit connected between the electrical input and the one or more electrical outputs, at least one microcontroller connected within the current limiting circuit, at least one current sensor connected within the current limiting circuit, one or more current limiting components within the current limiting circuit for increasing voltage and current over time from the electrical input to the one or more electrical outputs by operation of the current sensor and the microcontroller.