The present disclosure relates to semiconductor structures and, more particularly, to heat dissipating structures and methods of manufacture. The structure includes: a thin film resistor within a back end of the line structure; and a heat dissipating structure below the thin film resistor, the heat dissipating structure includes a top plate with a slotted configuration and being within the back end of the line structure.

Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes.

A medical temperature monitoring system includes an electrical wire set having a thermistor at a distal end of the wire set configured to sense temperatures to which the thermistor is exposed; an electronic circuit in electrical communication with the wire set and the thermistor and configured to convert the temperatures sensed by the thermistor to temperature display signals; a display in electrical communication with the electronic circuit for receiving the temperature display signals and displaying temperatures corresponding to the temperature display signals; and a bead of cured protective material encapsulating the thermistor. The protective material is a radiation curable adhesive applied to the thermistor in an uncured state and then cured to encapsulate the thermistor. The bead of cured protective material electrically isolates the conductor sufficient to pass a Hi-Pot test at 500 VAC, <0.1 mA.

Disclosed is a sheet resistor designed to operate in a high frequency environment. Unlike conventional sheet resistors, the equivalent series inductance (ESL) is minimized or even eliminated altogether when using the designed sheet resistor. As a result, better signal isolation can be achieved.

A magnetic sensor includes at least one MR element and a coil. The coil includes at least one conductor portion. The at least one conductor portion is each located at a position such that a partial magnetic field generated by the conductor portion is applied to one of the at least one MR element, the one corresponding to the conductor portion, and extends along an imaginary curve curving to protrude in a direction away from the corresponding MR element.

Structurally supported positive temperature coefficient (PTC) materials are disclosed. Furthermore, methods to provide structurally supported PTC materials are disclosed. In one implementation, a structurally supported PTC material includes a support structure that is at least partially covered by a PTC material. In one example, the support structure is a mesh material integrated at least partially in the PTC material.

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.