An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

A temperature detecting apparatus includes a thermistor; a resistor connected in series to the thermistor: a temperature detector connected to a first node between the thermistor and the resistor; and a switch circuit including a first switch, a second switch, a third switch, and a fourth switch. The first switch and the third switch are connected in series, the second switch and the fourth switch are connected in series, the first switch and the second switch are connected to a power side, the third switch and the fourth switch are connected to a ground side, the thermistor is connected to a second node between the first switch and the third switch, and the resistor is connected to a third node between the second switch and the fourth switch.

The thick film resistor paste for a resistor has no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass. The thick film resistor paste comprises a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder, a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 3 to 60 mass % of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

The thick film resistor paste for a resistor has no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass. The thick film resistor paste comprises a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder, a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 3 to 60 mass % of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a lead-ruthenate-containing glass powder and an organic vehicle, the lead-ruthenate-containing glass powder comprises 10 to 70 mass % of lead ruthenate, a glass composition of the lead-ruthenate-containing glass powder comprises 3 to 30 mass % of silicon oxide, 30 to 90 mass % of lead oxide. 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

A film resistor and a thin-film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer including a first transition metal carbide.

An inrush current limiting circuit in aspects of the present disclosure may have one or more of the following features: a printed circuit board, an electrical input disposed on the circuit board, one or more electrical outputs disposed on the circuit board, a current limiting circuit connected between the electrical input and the one or more electrical outputs, at least one microcontroller connected within the current limiting circuit, at least one current sensor connected within the current limiting circuit, one or more current limiting components within the current limiting circuit for increasing voltage and current over time from the electrical input to the one or more electrical outputs by operation of the current sensor and the microcontroller.

An electrical component includes a main body, a metallic contact structure, which is in direct contact with the main body, and an electrically insulating passivation layer provided with an opening. The metallic contact structure is connected to an external contact-making element through the opening. Furthermore, the external contact-making element is covered and enclosed by a flexible metal composite layer. A method for producing an electrical component is also specified.