H01C10/00

TRIGGER POTENTIOMETER
20180323740 · 2018-11-08 ·

An electric hand tool that includes an electric motor, an electrical position indicator for operation by a user, and a control unit for controlling power delivery from a power supply to an electric motor, based signals received from the electrical position indicator. The electrical position sensor may be coupled to a trigger operable by a user, and the electrical position sensor may be configured to detect the relative position of the trigger and to only operate in the middle of its possible range. The control unit may determine if the signals received from the electrical position indicator are out of a defined range. If the signals received from the electrical position indicator are out of a defined range, the control unit may register a fault, such as a fully open and/or fully short fault.

MAGNETORESISTIVE STACK DEVICE FABRICATION METHODS
20240341199 · 2024-10-10 · ·

A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.

MAGNETORESISTIVE STACK DEVICE FABRICATION METHODS
20240341199 · 2024-10-10 · ·

A method of fabricating a magnetoresistive device may comprise forming an electrically conductive region and forming a first seed region on one side of the electrically conductive region. A surface of the first seed region may be treated by exposing the surface to a gas. A second seed region may be formed on the treated surface of the first seed region. The method may also comprise forming a magnetically fixed region on one side of the second seed region.

Manipulator and manipulation apparatus

A manipulator includes a manipulation body having a plurality of bar-shaped portions which intersect orthogonally with each other at one intersection point, and a plurality of detection bodies which detect a displacement of the manipulation body. The plural bar-shaped portions include a bar-shaped portion and another bar-shaped portion which intersect orthogonally with each other. The plural detection bodies include a first detection body which detects a displacement of one end side of the bar-shaped portion with respect to the intersection point, a second detection body which detects a displacement of the other end side of the bar-shaped portion with respect to the intersection point, and a third detection body which detects a displacement of one end side of the bar-shaped portion with respect to the intersection point.

PROCESS FOR IMPROVING PERFORMANCE OF SLIDING RHEOSTAT OF 5G COMMUNICATION HIGH-FREQUENCY SIGNAL BOARD

A process for improving the performance of the sliding rheostat of 5G communication high-frequency signal board with the sliding rheostat slides along between two bonding pads, includes the following steps: outer layer etching; resin plugging: a. plugging the resinous ink into the pre-plugging position; b: baking, baking on the baking plate of the oven after the plugging is finished: board polishing: using a ceramic brush to process the plugged board, then using a non-woven fabric blush to polish the surface that is polished by ceramic brush. The present invention provides a process for improving the performance of the sliding rheostat of 5G communication high-frequency signal board. The resin plugging method is used to plug the gap between the conductors of the sliding rheostat, so as to prevent the sliding rheostat from being unable to slide due to the altitude difference between conductors of the high-frequency signal board.

Chip component and method of producing the same

A chip resistor includes a substrate, and a plurality of resistor elements each having a resistive film provided on the substrate and an interconnection film provided on the resistive film in contact with the resistive film. An electrode is provided on the substrate. Fuses disconnectably connect the resistor elements to the electrode. The resistive film is made of at least one material selected from the group of NiCr, NiCrAl, NiCrSi, NiCrSiAl, TaN, TaSiO.sub.2, TiN, TiNO and TiSiON.

Chip resistor
09947443 · 2018-04-17 · ·

A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portion of the resistive element, a second inner electrode held in contact with a second end portion of the resistive element, a first reverse surface electrode reaching a first end portion of the base member, and a second reverse surface electrode reaching a second end portion of the base member. The length of the first and the second reverse surface electrodes is in a range of 2/10 to 3/10 of the length of the base member. Also, the length of the first and the second reverse surface electrodes is greater than the length of the first and the second inner electrodes.

Stacks of electrically resistive materials and related systems and apparatuses

Stacks of electrically resistive materials and related apparatuses, electrical systems, and methods are disclosed. An apparatus includes one or more resistor devices including a substrate, first and second electrically resistive materials, and an electrically insulating material between the first and second electrically resistive materials. The substrate includes a semiconductor material. A stepped trench is defined in the substrate by sidewalls and horizontal surfaces of the semiconductor material. The first electrically resistive material and the second electrically resistive material are within the stepped trench. A method of manufacturing a resistor device includes forming a stepped trench in the substrate, forming an etch stop material within the stepped trench, disposing an electrically resistive material within the stepped trench, disposing an electrically insulating material on the electrically resistive material, and repeating the disposing the electrically resistive material and the disposing the electrically insulating material operations a predetermined number of times.

Stacks of electrically resistive materials and related systems and apparatuses

Stacks of electrically resistive materials and related apparatuses, electrical systems, and methods are disclosed. An apparatus includes one or more resistor devices including a substrate, first and second electrically resistive materials, and an electrically insulating material between the first and second electrically resistive materials. The substrate includes a semiconductor material. A stepped trench is defined in the substrate by sidewalls and horizontal surfaces of the semiconductor material. The first electrically resistive material and the second electrically resistive material are within the stepped trench. A method of manufacturing a resistor device includes forming a stepped trench in the substrate, forming an etch stop material within the stepped trench, disposing an electrically resistive material within the stepped trench, disposing an electrically insulating material on the electrically resistive material, and repeating the disposing the electrically resistive material and the disposing the electrically insulating material operations a predetermined number of times.

Chip resistor
09704621 · 2017-07-11 · ·

A chip resistor includes a base member, a resistive element formed on the base member, a first inner electrode held in contact with a first end portion or the resistive element, a second inner electrode held in contact with a second end portion of the resistive element, a first reverse surface electrode reaching a first end portion of the base member, and a second reverse surface electrode reaching a second end portion of the base member. The length of the first and the second reverse surface electrodes is in a range of 2/10 to 3/10 of the length of the base member. Also, the length of the first and the second reverse surface electrodes is greater than the length of the first and the second inner electrodes.