The composite piezo resistive sensor device is a sensor device with high sensitivity, as well as unique and novel properties. More specifically, the device has a combination of a 3-D structure and a graphene mesh. The device has a cantilever structure that can be used to detect impulses in the surrounding environment to identify characteristics such as kinetic energy, resonant frequency, mass, density, shape, surface features, and inertial moments to infer the presence and prevalence of impulse sources. The composite silicon and graphene structure creates a mechanical moment of inertia that amplifies localized deformation and induces unique harmonic modes in the piezo resistor. The composite piezo resistor is much more sensitive and produces richer, continuous signal outputs without requiring surface functionalization, and it therefore has the ability to assay a wide range of micro and nano particles, as well inferring more generally the presence of impulse sources.

Provided is a resistance alloy enabling a decrease in the TCR of a shunt resistor for use in a current detection device capable of detecting large currents. A copper-manganese based resistance alloy for use in a shunt resistor further comprises tin and nickel and has a TCR less than or equal to 3610.sup.6/K at 100 C. with reference to 25 C.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

The present invention relates to a current detection device, in particular a current detection device using a shunt resistor. The current detection device (30) includes a resistive element (5) and a pair of electrodes (6, 7). The electrodes (6, 7) have detection areas (24a, 25a) demarcated by first slits (16, 17), second slits (26, 27), and contact surfaces (6a, 7a) that at least partially contacts the resistive element (5). The electrodes (6, 7) further have voltage detection portions (20, 21) arranged in the detection areas (24a, 25a).