A shunt resistor the resistive value of which can be lowered simply and easily has: a first resistive body, two base materials that sandwich the first resistive body therebetween and are joined by a welding to the first resistive body, and a second resistive body joined by a welding to the two base materials at different positions from the first resistive body. In addition, the second resistive body can come into contact with the first resistive body.

A shunt resistor the resistive value of which can be lowered simply and easily has: a first resistive body, two base materials that sandwich the first resistive body therebetween and are joined by a welding to the first resistive body, and a second resistive body joined by a welding to the two base materials at different positions from the first resistive body. In addition, the second resistive body can come into contact with the first resistive body.

A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

A shunt resistor having sufficient bonding strength includes a resistor, a pair of bases which are integrally formed with the resistor so as to sandwich the resistor, recessed holes which are respectively formed in the bases, and measurement terminals which are inserted into the recessed holes and are affixed to the bases. Each measurement terminal has a shaft part and a flange part that protrudes outwardly in the circumferential direction of the shaft part. Each recessed hole is formed to have a diameter smaller than the diameter of the flange part, and the shaft parts are respectively inserted into the recessed holes.

A shunt resistor having sufficient bonding strength includes a resistor, a pair of bases which are integrally formed with the resistor so as to sandwich the resistor, recessed holes which are respectively formed in the bases, and measurement terminals which are inserted into the recessed holes and are affixed to the bases. Each measurement terminal has a shaft part and a flange part that protrudes outwardly in the circumferential direction of the shaft part. Each recessed hole is formed to have a diameter smaller than the diameter of the flange part, and the shaft parts are respectively inserted into the recessed holes.

A variable resistance element includes: a variable resistance layer that is able to occlude and release at least one type of ions, and changes a resistance of the variable resistance layer according to an amount of the at least one type of ions; an ion occluding/releasing layer that is able to occlude and release the at least one type of ions; and an ion conductive layer that conducts the at least one type of ions between the variable resistance layer and the ion occluding/releasing layer, wherein the variable resistance layer and the ion occluding/releasing layer are made of the same constituent elements.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

An integrated spring mounted chip termination for converting energy of a circuit into heat to be absorbed by a heatsink. The integrated spring mounted chip termination includes an input tab configured to connect to the circuit. The integrated spring mounted chip termination also includes a chip termination having a top surface. The chip termination includes an input contact located on the top surface and configured to connect to the input tab, a resistor element located on the top surface and connected to the input contact, and a ground contact located on the top surface and connected to the resistor element. The integrated spring mounted chip termination also includes a formed ground spring connected to the ground contact of the chip termination, the formed ground spring configured to attach the chip termination to the heatsink, such that the chip termination and the heatsink are in contact.

In manufacturing method of shunt resistor according to the present invention, at least one of first and second conductors that is thicker than a resistance alloy plate member includes a joining surface abutted to the resistance alloy plate member with their edges on one side in a plate-thickness direction being aligned with each other, a first inclined surface that is gradually located on one side in the plate-thickness direction from the joining surface toward the side opposite to the resistance alloy plate member in the plate-surface direction, and a first plate surface extending to the side opposite to the resistance alloy plate member in the plate-surface direction from the first inclined surface. Electron beams or laser is emitted to the joining surfaces of the conductor having the larger thickness and the resistance alloy plate member from one side in the plate-thickness direction to weld the joining surfaces.