The method includes the steps of preparing at least three conductive elongated boards 711 made of an electrically conductive material and a resistive member 702 made of a resistive material, arranging the at least three conductive elongated boards 711 apart from each other along a width direction crossing a longitudinal direction in which one of the at least three conductive elongated boards 711 is elongated, forming a resistor aggregate 703 by bonding the resistive member 702 to the at least three conductive elongated boards 711, and collectively dividing the resistor aggregate 703 into a plurality of chip resistors by punching so that each of the chip resistors includes two electrodes and a resistor portion bonded to the two electrodes.

A chip resistor includes a substrate, a resistor layer, a first conductive layer, an insulating layer, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first conductive layer is electrically connected to the resistor layer. The insulating layer covers the resistor layer and the first conductive layer. The second conductive layer covers the first conductive layer and the insulating layer. The third conductive layer covers the second conductive layer and the insulating layer. The fourth conductive layer covers the second conductive layer and the third conductive layer. Bonding strength between the third and fourth conductive layer is stronger than that between the second and fourth conductive layer.

The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

A surface-mounted polymer PTC overcurrent protection element having a small package size, comprising a PTC chip, an insulating layer (30), end electrodes (41, 42), and at least one conductive member (60). A dividing gap is designed on a first conductive electrode (21) to form first and second conductive areas (211, 212); the conductive member (60) is arranged at the edge or at least a corner of the first conductive area (211) side of the PTC chip, is used for conducting the first conductive area (211) and a second conductive electrode (22) on the PTC chip, and is not in contact with the end electrodes (41, 42); the main portion comprised in the dividing gap (70) of the first conductive electrode (21) is parallel to the longitudinal direction of the first end electrode (41) and the second end electrode (42). Also provided is a preparation method for the protection element. Thus, the miniaturized overcurrent protection element can satisfy the current PCB process to achieve requirements of mass production. It is convenient to design an overcurrent protection element resistance scheme, and reduce adjustment of a PTC core material formulation.

The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode.

A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a flat film, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the flat film, wherein the flat film and the reinforcing portions constitute a gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the flat film, so as to increase an effective overlapping area between the flat film and the active layer, and reduce a width and a length of the thin film transistor.