A method of increasing coercivity of an Nd—Fe—B sintered permanent magnet includes a step of providing an organic film. A powder, containing at least one heavy rare earth elements, is uniformly deposited on the organic film forming a diffusion source. Then, a sintered Nd—Fe—B magnet block having a pair of block surfaces extending perpendicular to a magnetization direction is provided. Next, the diffusion source is deposited on at least one of the block surfaces with the powder being in abutment relationship with at least one of the block surfaces. After depositing the diffusion source, the sintered Nd—Fe—B magnet block containing the diffusion source is pressed allowing the powder of the diffusion source to be in close contact with the block surface. The diffusion source is then diffused into the sintered Nd—Fe—B magnet block to produce a diffused magnet block. Next, the diffused magnet block is aged.

Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.

Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

A coil component and a board having the same are provided. The coil component includes: a first coil; a second coil sharing a magnetic core with the first coil; a main board disposed between the first and second coils; first and second external electrodes connected to the first coil; and third and fourth external electrodes connected to the second coil.

A permanent magnet includes a stack of N patterns stacked immediately one above the other in a stacking direction, each pattern including an antiferromagnetic layer made of antiferromagnetic material, a ferromagnetic layer made of ferromagnetic material, the directions of magnetization of the various ferromagnetic layers of all the patterns all being identical to one another. At least one ferromagnetic layer includes a first sub-layer made of CoFeB whose thickness is greater than 0.05 nm, and a second sub-layer made of a ferromagnetic material different from CoFeB and whose thickness is greater than the thickness of the first sub-layer.

A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.

An iron-based magnetic thin film comprising from 0% to 25% of aluminum in terms of atomic ratio; wherein the iron-based magnetic thin film comprises a plurality of crystals having an average crystallite size of 100 or less; the iron-based magnetic thin film is disposed on a surface of a substrate; and a <110> direction of a crystal of the iron-based magnetic thin film is perpendicular to the surface of the substrate.

This invention relates to structures comprising magnetic materials and conjugated molecules. The invention relates to magneto-resistive devices based on such structures. Structures and devices of the invention can be used as magnetic switches, magnetic sensors and in devices such in/as memory devices.