A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB.

A capacitor includes a first plate and a second plate parallel to the first plate. An RF source includes a first line and a second line through which RF is fed. The first line is electrically connected to the first plate. The second line is passed through the first and second plates and then looped around the first and second plates, and the pass and loop of the second line is repeated at least once. The second line is then passed through the first plate and electrically connected to the second plate to form a capacitor having negative capacitance.

A capacitor includes a first plate and a second plate parallel to the first plate. An RF source includes a first line and a second line through which RF is fed. The first line is electrically connected to the first plate. The second line is passed through the first and second plates and then looped around the first and second plates, and the pass and loop of the second line is repeated at least once. The second line is then passed through the first plate and electrically connected to the second plate to form a capacitor having negative capacitance.

Methods and techniques for fabricating layered structures, such as capacitive micromachined ultrasound transducers, as well as the structures themselves. The layered structure has a membrane that includes a polymer-based layer and a top electrode on the polymer-based layer. The membrane is suspended over a closed cavity and may be actuated by applying a voltage between the top electrode and a bottom electrode that may be positioned along or be a bottom of the closed cavity. The layered structure may be fabricated using a wafer bonding process.

Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

A method of manufacturing a capacitive electrical device is disclosed. The method includes a) bonding a first electrical insulation film with a second electrical insulation film to obtain a single electrical insulation film that has a larger surface area than any of the first electrical insulation film and the second electrical insulation film has alone, b) providing a conductive layer onto the single electrical insulation film, and c) winding the single electrical insulation film and the conductive layer around a shaft to obtain a layer of the single electrical insulation film and a layer of the conductive layer wound onto the shaft, thereby forming the capacitive electrical device.

An electronic modulating device is provided. The electronic modulating device includes a first substrate, a second substrate, at least one working unit and at least one adjustment structure. The second substrate is disposed opposite to the first substrate. The at least one working unit includes a first cell gap and is disposed between the first substrate and the second substrate. The at least one working unit includes a modulating material. The at least one adjustment structure includes a second cell gap and is disposed between the first substrate and the second substrate. The second cell gap is greater than the first cell gap.

An electronic modulating device is provided. The electronic modulating device includes a first substrate, a second substrate, at least one working unit and at least one adjustment structure. The second substrate is disposed opposite to the first substrate. The at least one working unit includes a first cell gap and is disposed between the first substrate and the second substrate. The at least one working unit includes a modulating material. The at least one adjustment structure includes a second cell gap and is disposed between the first substrate and the second substrate. The second cell gap is greater than the first cell gap.

Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.