Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (f.sub.T) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (V.sub.d1); extracting a transconductance (G.sub.m) from the first set of in-line DC parameters as a function of a gate-voltage (V.sub.g) and the first drain-voltage (V.sub.d1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (V.sub.d2); extracting a total gate capacitance (C.sub.gg) from the second set of in-line DC parameters as a function of the gate-voltage (V.sub.g); and predicting the unity gain frequency (f.sub.T) of the MOSFET based upon the extracted transconductance (G.sub.m) and the extracted total gate capacitance (C.sub.gg).

The technology described herein is directed towards phase-change material-based (e.g., chalcogenide) radio frequency components including for use in unit cells of a reconfigurable intelligent surface. A multi-state tunable capacitive element for reconfigurable operation is described, in which phase-change material operates as a switching element to controllably vary capacitance of each unit cell. The multi-state tunable capacitive element can be made of multiple subcircuits in which capacitors of various values can be selectively switched in or out to vary the capacitance of the tunable capacitive element. Arranging the subcircuits with capacitors of different values, and actuating each one in or out of the overall capacitive element, an analog-like variable capacitor is realized that provides more granular phase shift control of cells of a reconfigurable intelligent surface. When used with a dual split ring resonator capacitor, phase changes of a unit cell are achieved that redirect electromagnetic waves of two different frequencies.

The technology described herein is directed towards phase-change material-based (e.g., chalcogenide) radio frequency components including for use in unit cells of a reconfigurable intelligent surface. A multi-state tunable capacitive element for reconfigurable operation is described, in which phase-change material operates as a switching element to controllably vary capacitance of each unit cell. The multi-state tunable capacitive element can be made of multiple subcircuits in which capacitors of various values can be selectively switched in or out to vary the capacitance of the tunable capacitive element. Arranging the subcircuits with capacitors of different values, and actuating each one in or out of the overall capacitive element, an analog-like variable capacitor is realized that provides more granular phase shift control of cells of a reconfigurable intelligent surface. When used with a dual split ring resonator capacitor, phase changes of a unit cell are achieved that redirect electromagnetic waves of two different frequencies.

The technology described herein is directed towards phase-change material-based (e.g., chalcogenide) radio frequency components that can be used in unit cells of a reconfigurable intelligent surface. A multi-state tunable capacitive element for reconfigurable operation is described, in which phase-change material operates as a switching element to controllably vary capacitance of each unit cell. The multi-state tunable capacitive element can be made of multiple subcircuits in which capacitors of various values can be selectively switched in or out to vary the capacitance of the multi-state tunable capacitive element, resulting in a phase change of a unit cell with respect to reflecting or refracting an electromagnetic wave. By arranging the subcircuits with capacitors of different values, and actuating each one in or out of the overall capacitive element, an analog-like variable capacitor is provided to provide more granular phase shift control of cells of a reconfigurable intelligent surface.

The technology described herein is directed towards phase-change material-based (e.g., chalcogenide) radio frequency components that can be used in unit cells of a reconfigurable intelligent surface. A multi-state tunable capacitive element for reconfigurable operation is described, in which phase-change material operates as a switching element to controllably vary capacitance of each unit cell. The multi-state tunable capacitive element can be made of multiple subcircuits in which capacitors of various values can be selectively switched in or out to vary the capacitance of the multi-state tunable capacitive element, resulting in a phase change of a unit cell with respect to reflecting or refracting an electromagnetic wave. By arranging the subcircuits with capacitors of different values, and actuating each one in or out of the overall capacitive element, an analog-like variable capacitor is provided to provide more granular phase shift control of cells of a reconfigurable intelligent surface.

A method of forming a stacked electronic component, and an electronic component formed by the method wherein the method includes: providing a multiplicity of electronic components wherein each electronic component comprises a first external termination and a second external termination; providing a first lead frame plate and a second lead frame plate wherein the first lead frame plate and the second lead frame plate comprises barbs and leads; providing a molded case comprising a cavity and a bottom; and forming a sandwich of electronic components in an array between the first lead frame plate and the second lead frame plate with the barbs protruding towards the electronic components and the leads extending through the bottom.

Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region. In certain aspects, the first non-insulative region is disposed above a first portion of the semiconductor region and a second portion of the semiconductor region, and the first portion and the second portion of the semiconductor region are disposed adjacent to a first side and a second side, respectively, of the control region or the second non-insulative region.

Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.