A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

A differential pressure sensor comprises a cavity having a base including a base electrode and a membrane suspended above the base which includes a membrane electrode, wherein the first membrane is sealed with the cavity defined beneath the first membrane. A first pressure input port is coupled to the space above the sealed first membrane. A capacitive read out system is used to measure the capacitance between the base electrode and membrane electrode. An interconnecting channel is between the cavity and a second pressure input port, so that the sensor is responsive to the differential pressure applied to opposite sides of the membrane by the two input ports.

A laminated ceramic capacitor that includes a ceramic laminated body having a stacked plurality of ceramic dielectric layers and a plurality of internal electrodes opposed to each other with the ceramic dielectric layers interposed therebetween, and external electrodes on the outer surface of the ceramic laminated body and electrically connected to the internal electrodes. The internal electrodes contain Ni and Sn, a proportion of the Sn/(Ni+Sn) ratio is 0.001 or more in molar ratio is 75% or more in a region of the internal electrode at a depth of 20 nm from a surface opposed to the ceramic dielectric layer, and the proportion of the Sn/(Ni+Sn) ratio is 0.001 or more in molar ratio is less than 40% in a central region in a thickness direction of the internal electrode.

In one embodiment, an RF impedance matching network utilizing at least one electronically variable capacitors (EVC) is disclosed. Each EVC includes discrete capacitors operably coupled in parallel, the discrete capacitors including fine capacitors and coarse capacitors. A control circuit determines a parameter related to the plasma chamber and, based on the parameter, determines which of the coarse capacitors and which of the fine capacitors to have switched in to cause an impedance match. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.

In one embodiment, an RF impedance matching network utilizing at least one electronically variable capacitors (EVC) is disclosed. Each EVC includes discrete capacitors operably coupled in parallel, the discrete capacitors including fine capacitors and coarse capacitors. A control circuit determines a parameter related to the plasma chamber and, based on the parameter, determines which of the coarse capacitors and which of the fine capacitors to have switched in to cause an impedance match. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.

An electronic modulating device is provided. The electronic modulating device includes a first substrate, a second substrate, at least one working unit and at least one adjustment structure. The second substrate is disposed opposite to the first substrate. The at least one working unit includes a first cell gap and is disposed between the first substrate and the second substrate. The at least one working unit includes a modulating material. The at least one adjustment structure includes a second cell gap and is disposed between the first substrate and the second substrate. The second cell gap is greater than the first cell gap.

An electronic modulating device is provided. The electronic modulating device includes a first substrate, a second substrate, at least one working unit and at least one adjustment structure. The second substrate is disposed opposite to the first substrate. The at least one working unit includes a first cell gap and is disposed between the first substrate and the second substrate. The at least one working unit includes a modulating material. The at least one adjustment structure includes a second cell gap and is disposed between the first substrate and the second substrate. The second cell gap is greater than the first cell gap.

In one embodiment, a switching circuit includes an electronic switch comprising one or more diodes for switching a reactance element within an electronically variable reactance element. A first power switch receives an input signal and a first voltage, and switchably connects the first voltage to a common output in response to the received input signal. A second power switch receives an input signal and a second voltage, and switchably connects the second voltage to the common output in response to the received input signal. The second voltage is opposite in polarity to the first voltage. The first power switch and the second power switch asynchronously connect the first voltage and the second voltage, respectively, to the common output, the one or more diodes of the electronic switch being switched according to the first voltage or the second voltage being connected to the common output.

In one embodiment, a switching circuit includes an electronic switch comprising one or more diodes for switching a reactance element within an electronically variable reactance element. A first power switch receives an input signal and a first voltage, and switchably connects the first voltage to a common output in response to the received input signal. A second power switch receives an input signal and a second voltage, and switchably connects the second voltage to the common output in response to the received input signal. The second voltage is opposite in polarity to the first voltage. The first power switch and the second power switch asynchronously connect the first voltage and the second voltage, respectively, to the common output, the one or more diodes of the electronic switch being switched according to the first voltage or the second voltage being connected to the common output.

Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.