Patent classifications
H01H1/00
REDUCTION OF RINGING AND INTERMODULATION DISTORTION IN A MEMS DEVICE
Described embodiments include a microelectromechanical system (MEMS) array comprising a first MEMS device that includes a first movable electrostatic plate elastically connected to a first structure, the first movable electrostatic plate having a first mass, a first fixed electrostatic plate, and a first drive circuit having a first drive output coupled to the first fixed electrostatic plate. There is a second MEMS device that includes a second movable electrostatic plate elastically connected to a second structure, the second movable electrostatic plate having a second mass that is different than the first mass, a second fixed electrostatic plate, and a second drive circuit having a second drive output coupled to the second fixed electrostatic plate.
MEMS switch
A MEMS switch includes: a housing, a switching assembly; a first actuation electrode, a first contact, a second contact, and a second actuation electrode. The switching device has a stress gradient along the thickness direction, such that in response to applying no voltage between the first actuation electrode and the second actuation electrode, the switching assembly contacts with the first contact. In response to applying a first voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly is spaced apart from both the first contact and the second contact. In response to applying a second voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly contacts with the second contact. The first voltage is smaller than the third voltage.
HIGH FREQUENCY LARGE BANDWIDTH POWER SWITCH AND DEVICE INCORPORATING SUCH POWER SWITCHES
A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer >2) parallel conducting branchesand i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.
CIRCUIT BREAKERS INCORPORATING RESET LOCKOUT MECHANISMS
Multi-pole and single-pole circuit breakers include a housing and a reset lockout mechanism disposed within the housing. The reset lockout mechanism disables electrical communication between line and load terminals of the circuit breaker if a predefined condition exists. Some circuit breakers include a single actuator, transition between ON and OFF states, and are capable of performing test functions. The test functions may involve testing AFCI and/or GFCI functions of the circuit breakers. The test functions may be performed when the circuit breaker transitions from an OFF state to an ON state. Some circuit breakers including a reset lockout mechanism may be powered only on its line side. Some circuit breakers provide an electrical indication when they are in the OFF state.
ESD protection of MEMS for RF applications
The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.
Switch and method for manufacturing the switch
The invention relates to a switch including a switch housing, a contact system and a base disposed in the switch housing, a resistive element for diagnosing a state of a switch, and at least two terminals leading from the base. The resistive element has a specific resistance value. The resistive element is a conductive material formed on the base, the terminals being electrically connected by the conductive material.
Electronic control device, work vehicle, and input circuit
An electronic control device includes an input terminal connected to a second terminal of a switch via an electrically conductive lead, an input circuit connected to the input terminal via a signal line, and a microcontroller to detect whether the switch is in an electrically conducting state or an electrically non-conducting state based on an output signal from the input circuit, and to perform at least one process in accordance with a detected result. The input circuit includes a first resistor connected to a supply voltage or ground and to the signal line, and a transient current circuit connected to the supply voltage or ground and to the signal line, the transient current circuit including a second resistor that allows a transient current to flow through the switch when the switch transitions from the electrically non-conducting state to the electrically conducting state.
MEMS SWITCH INCLUDING AN EMBEDDED METAL CONTACT
A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer.
A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion.
A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.
METHOD AND DEVICE FOR DETERMINING CONTACT THICKNESS CHANGE OF A CONTACTOR
A method for determining contact thickness change in a contactor includes sensing a first displacement distance moved by an armature of the contactor from a reference location to a first transition point during a switch-off operation of the contactor at a first contactor life reference time when movable contacts and fixed contacts of the contactor define a first contact thickness. The method further includes sensing a second displacement distance moved by the armature from the reference location to a second transition point during a switch-off operation at a second contactor life reference time that is after the first contactor life reference time when the movable and fixed contacts define a second contact thickness that is less than the first contact thickness. The first displacement distance and the second displacement distance are used to determine a contact thickness change between the first contact thickness and the second contact thickness. A contactor adapted to implement the method is also disclosed.
SYSTEMS AND METHODS FOR RELAY CONTACT ASSEMBLY REDUCTION
Systems and methods for contact erosion mitigation are provided. To perform contact erosion mitigation, an order of opening/closing poles and/or contact relays of particular poles is altered, resulting in a sharing of potential arcing conditions amongst the poles/contact relays of these poles.