A disconnect switch assembly includes first and second disconnect switches with each of the first and second disconnect switch including a housing, a fixed main contact in the housing, and a movable main contact in the housing in cooperating alignment with the fixed main contact. Each of the movable main contacts is coupled to a (common) first actuator. A second actuator is coupled to the housing of the first disconnect switch and a third actuator is coupled to the housing of the second disconnect switch. The first actuator is configured to concurrently apply first and second motive forces (in opposing but in-line directions) to the movable contacts of the first and second disconnect switches. The second and third actuators are configured to apply a motive force to the housings that is in a direction opposing a respective motive force applied by the first actuator to the movable main contacts.

Provided is an apparatus comprising a conductive particle interconnect (CPI). The CPI includes an elastomeric carrier and a plurality of conductive particles dispersed therein. The elastomeric carrier includes an electroactive polymer (EAP) configured to move between a first position and a second position in response to an electrical field. The CPI is configured to exhibit a first electrical resistance when the EAP is in the first position and a second electrical resistance when the EAP is in the second position. The apparatus further comprises one or more electrodes electrically coupled to the CPI. The electrodes are configured to generate the electrical field within the CPI. The apparatus further comprises one or more insulators coupled to the CPI. The one or more insulators are configured to constrain expansion of the CPI in at least one direction.

Provided is an apparatus comprising a conductive particle interconnect (CPI). The CPI includes an elastomeric carrier and a plurality of conductive particles dispersed therein. The elastomeric carrier includes an electroactive polymer (EAP) configured to move between a first position and a second position in response to an electrical field. The CPI is configured to exhibit a first electrical resistance when the EAP is in the first position and a second electrical resistance when the EAP is in the second position. The apparatus further comprises one or more electrodes electrically coupled to the CPI. The electrodes are configured to generate the electrical field within the CPI. The apparatus further comprises one or more insulators coupled to the CPI. The one or more insulators are configured to constrain expansion of the CPI in at least one direction.

Provided is an apparatus comprising a conductive particle interconnect (CPI) and an electroactive polymer (EAP) structure. The CPI includes an elastomeric carrier and a plurality of conductive particles dispersed therein. The EAP structure is disposed around at least a portion of the CPI. The EAP structure is configured to move between a first position and a second position in response to an electrical field. The CPI is configured to exhibit a first electrical resistance when the EAP structure is in the first position and a second, different electrical resistance when the EAP structure is in the second position.

Provided is an apparatus comprising a conductive particle interconnect (CPI) and an electroactive polymer (EAP) structure. The CPI includes an elastomeric carrier and a plurality of conductive particles dispersed therein. The EAP structure is disposed around at least a portion of the CPI. The EAP structure is configured to move between a first position and a second position in response to an electrical field. The CPI is configured to exhibit a first electrical resistance when the EAP structure is in the first position and a second, different electrical resistance when the EAP structure is in the second position.

Systems, devices, and methods disclosed herein can generally include electrical contacts for high voltage, high current, and/or fast acting electromechanical switches and methods for manufacturing the same. The electrical contacts can be optimized for high voltage blocking capabilities with minimal gap spacing in the open state and low electrical resistance when in contact in the closed state. Electrical contacts can have a geometry to produce a low peak electric field between the contacts when in the open state, have a high contact surface area when in the closed state, and a low mass. The geometry of the contacts can be based on geometries traditionally utilized for uniform field electrodes.

Systems, devices, and methods disclosed herein can generally include electrical contacts for high voltage, high current, and/or fast acting electromechanical switches and methods for manufacturing the same. The electrical contacts can be optimized for high voltage blocking capabilities with minimal gap spacing in the open state and low electrical resistance when in contact in the closed state. Electrical contacts can have a geometry to produce a low peak electric field between the contacts when in the open state, have a high contact surface area when in the closed state, and a low mass. The geometry of the contacts can be based on geometries traditionally utilized for uniform field electrodes.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.