A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.

The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

[Object] To provide an electrostatic device capable of improving device characteristics.

[Solving Means] An electrostatic device according to an embodiment of the present technology includes an electrically conductive base material, a first conductor layer, a second conductor layer, and a bonding layer. The first conductor layer includes a first electrode portion and a first base portion and is connected to a signal line. The first base portion supports the first electrode portion and is disposed on the base material. The second conductor layer includes a second electrode portion and a second base portion and is connected to a reference potential. The second electrode portion is opposed to the first electrode portion in a first axis direction and configured to be movable relative to the first electrode portion in the first axis direction. The second base portion supports the second electrode portion and is disposed on the base material. The bonding layer is disposed between the base material and the first and second base portions and includes a plurality of first bonding portions that partially support at least the first base portion.

[Object] To provide an electrostatic device capable of improving device characteristics.

[Solving Means] An electrostatic device according to an embodiment of the present technology includes an electrically conductive base material, a first conductor layer, a second conductor layer, and a bonding layer. The first conductor layer includes a first electrode portion and a first base portion and is connected to a signal line. The first base portion supports the first electrode portion and is disposed on the base material. The second conductor layer includes a second electrode portion and a second base portion and is connected to a reference potential. The second electrode portion is opposed to the first electrode portion in a first axis direction and configured to be movable relative to the first electrode portion in the first axis direction. The second base portion supports the second electrode portion and is disposed on the base material. The bonding layer is disposed between the base material and the first and second base portions and includes a plurality of first bonding portions that partially support at least the first base portion.

Nanocomposite sensing materials are formulated with low aspect ratio conductive fillers with close to or higher than percolation threshold in a low Poisson's Ratio matrix binder with a high gauge factor, low temperature coefficient of resistance (TCR), low temperature coefficient of gauge factor (TCGF), and low hysteresis.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

A micro-electro-mechanical system includes a deflectable actuator plate and an abutment area. An integral piezoelectric functional layer of the deflectable actuator plate is configured across an area A.sub.PS of the actuator plate. The deflectable actuator plate is configured to effect a hollow warp in at least a controlled or non-controlled state, wherein the abutment area is disposed facing a hollow side of the deflectable actuator plate defined by the hollow warp. The deflectable actuator plate is configured to provide, in the state in which the same effects the hollow warp, mechanical contact between the deflectable actuator plate and the abutment area. In the other state, the deflectable actuator plate is disposed spaced apart from the abutment area.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.