An automatic RF filter tuning system and a method for manufacturing a filter using the same are disclosed. An RF filter tuning system for tuning an RF filter that includes a plurality of cavities having resonance elements and a cover having tuning areas that are positioned correspondingly to the resonance elements, includes a measuring unit configured to measure resonance characteristics of the cavity of the RF filter, a control unit configured to calculate a tuning value of the RF filter based on the resonance characteristics, and a tuning unit configured to tune the RF filter based on the tuning value calculated by the control unit. The tuning unit includes a striking unit configured to strike the tuning area of the cover of the RF filter, thereby adjusting the resonance value and tuning the RF filter.

A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume.

An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.

An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.

An automatic RF filter tuning system and a method for manufacturing a filter using the same are disclosed. An RF filter tuning system for tuning an RF filter that includes a plurality of cavities having resonance elements and a cover having tuning areas that are positioned correspondingly to the resonance elements, includes a measuring unit configured to measure resonance characteristics of the cavity of the RF filter, a control unit configured to calculate a tuning value of the RF filter based on the resonance characteristics, and a tuning unit configured to tune the RF filter based on the tuning value calculated by the control unit. The tuning unit includes a striking unit configured to strike the tuning area of the cover of the RF filter, thereby adjusting the resonance value and tuning the RF filter.

An automatic RF filter tuning system and a method for manufacturing a filter using the same are disclosed. An RF filter tuning system for tuning an RF filter that includes a plurality of cavities having resonance elements and a cover having tuning areas that are positioned correspondingly to the resonance elements, includes a measuring unit configured to measure resonance characteristics of the cavity of the RF filter, a control unit configured to calculate a tuning value of the RF filter based on the resonance characteristics, and a tuning unit configured to tune the RF filter based on the tuning value calculated by the control unit. The tuning unit includes a striking unit configured to strike the tuning area of the cover of the RF filter, thereby adjusting the resonance value and tuning the RF filter.

Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.

Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.

Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.

An automatic RF filter tuning system and a method for manufacturing a filter using the same are disclosed. An RF filter tuning system for tuning an RF filter that includes a plurality of cavities having resonance elements and a cover having tuning areas that are positioned correspondingly to the resonance elements, includes a measuring unit configured to measure resonance characteristics of the cavity of the RF filter, a control unit configured to calculate a tuning value of the RF filter based on the resonance characteristics, and a tuning unit configured to tune the RF filter based on the tuning value calculated by the control unit. The tuning unit includes a striking unit configured to strike the tuning area of the cover of the RF filter, thereby adjusting the resonance value and tuning the RF filter.