A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

Disclosed is An apparatus for treating a substrate includes a chamber having a treatment space provided therein to treat the substrate and having an entrance for introducing or withdrawing the substrate, a liner disposed in the treatment space, disposed adjacent to an inner sidewall of the chamber, and having an opening formed at a position of facing the entrance to introduce or withdraw the substrate, a supporting unit to support the substrate in the treatment space, a gas supplying unit to supply process gas to the treatment space, a plasma source to produce plasma from the process gas, and a door assembly to open or close the entrance. The door assembly includes a door which includes a door unit provided outside the chamber to be movable between an opening position to open the entrance and a closing position to close the entrance, and an insertion unit extending from the door unit toward the treatment space and inserted into the opening of the liner at the closing position, and a door driving unit to drive the door.

Disclosed is An apparatus for treating a substrate includes a chamber having a treatment space provided therein to treat the substrate and having an entrance for introducing or withdrawing the substrate, a liner disposed in the treatment space, disposed adjacent to an inner sidewall of the chamber, and having an opening formed at a position of facing the entrance to introduce or withdraw the substrate, a supporting unit to support the substrate in the treatment space, a gas supplying unit to supply process gas to the treatment space, a plasma source to produce plasma from the process gas, and a door assembly to open or close the entrance. The door assembly includes a door which includes a door unit provided outside the chamber to be movable between an opening position to open the entrance and a closing position to close the entrance, and an insertion unit extending from the door unit toward the treatment space and inserted into the opening of the liner at the closing position, and a door driving unit to drive the door.

Various methods and systems are provided for acquiring electron backscatter diffraction patterns. In one example, a first scan is performed by directing a charged particle beam towards multiple impact points within a ROI and detecting particles scattered from the multiple impact points. A signal quality of each impact point of the multiple impact points is calculated based on the detected particles. A signal quality of the ROI is calculated based on the signal quality of each impact point. Responsive to the signal quality of the ROI lower than a threshold signal quality, a second scan of the ROI is performed. A structural image of the sample may be formed based on detected particles from both the first scan and the second scan.

A secondary storage container is a member which surrounds a primary storage container. A vaporized coolant generated in a primary storage space flows into and is stored in the secondary storage container. Radiant heat is blocked by the secondary storage container in a cooled state. Heat transferred to the primary storage container is reduced by a heat conducting path including the secondary storage container.

An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

A beam blanking device for a multi-beamlet charged particle beam apparatus is provided. The beam blanking device includes a first blanking unit, a second blanking unit and a third blanking unit. The first blanking unit includes a first blanking electrode and a first aperture. The second blanking unit includes a second blanking electrode and a second aperture. The third blanking unit includes a third blanking electrode and a third aperture. The beam blanking device includes a common electrode forming a first counter electrode for the first blanking electrode, a second counter electrode for the second blanking electrode and a third counter electrode for the third blanking electrode. The first blanking unit, the second blanking unit and the third blanking unit are arranged in a planar array and define a plane of the planar array. The first blanking electrode is arranged for generating a first electric field between the first blanking electrode and the common electrode in the first aperture for deflecting a first beamlet of the multi-beamlet charged particle beam apparatus into a first deflection direction. The second blanking electrode is arranged for generating a second electric field between the second blanking electrode and the common electrode in the second aperture for deflecting a second beamlet of the multi-beamlet charged particle beam apparatus into a second deflection direction. The third blanking electrode is arranged for generating a third electric field between the third blanking electrode and the common electrode in the third aperture for deflecting a third beamlet of the multi-beamlet charged particle beam apparatus into a third deflection direction. A dividing plane intersecting the planar array separates the first blanking unit from the second blanking unit and the third blanking unit, wherein the first deflection direction, the second deflection direction and the third deflection direction point away from the dividing plane.