In a plasma etching method, a deposit containing an element forming an upper electrode is deposited on a metal-containing mask having a predetermined pattern while sputtering the upper electrode by a plasma of a first processing gas. Then, an etching target film is etched by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.

A transceiver architecture supports high-speed communication over a signal lane that extends between a high-performance integrated circuit (IC) and one or more relatively low-performance ICs employing less sophisticated transmitters and receivers. The architecture compensates for performance asymmetry between ICs communicating over a bidirectional lane by instantiating relatively complex transmit and receive equalization circuitry on the higher-performance side of the lane. Both the transmit and receive equalization filter coefficients in the higher-performance IC may be adaptively updated based upon the signal response at the receiver of the higher-performance IC.

A transceiver architecture supports high-speed communication over a signal lane that extends between a high-performance integrated circuit (IC) and one or more relatively low-performance ICs employing less sophisticated transmitters and receivers. The architecture compensates for performance asymmetry between ICs communicating over a bidirectional lane by instantiating relatively complex transmit and receive equalization circuitry on the higher-performance side of the lane. Both the transmit and receive equalization filter coefficients in the higher-performance IC may be adaptively updated based upon the signal response at the receiver of the higher-performance IC.

Respective peaks detected on chromatograms created based on data obtained by conducting GC-MS analysis on a target sample are identified based on information stored in a compound database (S1, S2). A retention time list indicating relationships between compounds and measured peak retention times is created based on results of identification of the peak. Then a plurality of compounds in which the measured retention times are identical to each other or are within an allowable range are extracted and are combined into one group (S3, S4). A determination is made whether overlapping identifications exist by determining whether a single group includes a plurality of compounds (S5, S6). Retention times, mass spectrums, and confirmation ion ratio reference values stored in the compound database are used for the respective groups in which overlapping identifications are likely to exist so that a most likely compound candidate is selected (S7).

Described are systems and methods for compressing a plasma through electric and magnetic interactions between groups of positively charged particles and negatively charged particles of the plasma.

A manufacturing process of an element chip comprises steps of preparing a substrate including a plurality of etching regions and element regions each containing a plurality of convex and concave portions, holding the substrate and a frame with a holding sheet, forming a protective film by applying a first mixture to form a coated film above the substrate and by drying the coated film to form the protective film along the convex and concave portions, the first mixture containing a water-soluble first resin, water and a water-soluble organic solvent and has a vapor pressure higher than water, removing the protective film by irradiating a laser beam thereon to expose the substrate in the etching regions, plasma-etching the substrate along the etching regions while maintaining the protective film in the element regions to individualize the substrate, and removing the protective film by contacting the protective film with an aqueous rinse solution.

A manufacturing process of an element chip comprises steps of preparing a substrate including a plurality of etching regions and element regions each containing a plurality of convex and concave portions, holding the substrate and a frame with a holding sheet, forming a protective film by applying a first mixture to form a coated film above the substrate and by drying the coated film to form the protective film along the convex and concave portions, the first mixture containing a water-soluble first resin, water and a water-soluble organic solvent and has a vapor pressure higher than water, removing the protective film by irradiating a laser beam thereon to expose the substrate in the etching regions, plasma-etching the substrate along the etching regions while maintaining the protective film in the element regions to individualize the substrate, and removing the protective film by contacting the protective film with an aqueous rinse solution.

Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

Various embodiments include an apparatus to filter radio-frequencies in a plasma-based processing device. In various embodiments, an RF filter device includes a number of substantially-planar spiral-filters electrically coupled to and substantially parallel to each other in a spaced-apart arrangement. In one embodiment, each of the planar spiral-filters is coupled to an adjacent one of the planar spiral filters as either an inside-to-inside electrical connection or an outside-to-outside electrical connection based on an arrangement of the successive spirals so as to increase a total value of inductance. Other methods, devices, apparatuses, and systems are disclosed.

Bending of a hole or a groove formed in a multilayered film including silicon oxide films and silicon nitride films alternately stacked on top of each other is suppressed. A plasma etching method includes a first etching process of etching, by plasma, the multilayered film including the silicon oxide films and the silicon nitride films alternately stacked on top of each other; and a second etching process of etching, by plasma, the multilayered film under a processing condition that an inclination of a portion of an inner sidewall of the hole or the groove, which is formed by the etching of the multilayered film, corresponding to the silicon nitride film with respect to a depth direction of the hole or the groove is reduced.