A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Mineral definitions each include a list of elements, each of the elements having a corresponding standard spectrum. To determine the composition of an unknown mineral sample, the acquired spectrum of the sample is sequentially decomposed into the standard spectra of the elements from the element list of each of the mineral definitions, and a similarity metric computed for each mineral definition. The unknown mineral is identified as the mineral having the best similarity metric.

To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.

A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films are alternately stacked, and a second region including a single-layered silicon oxide film is provided. The etching method includes a first plasma process of generating plasma of a first processing gas containing a fluorocarbon gas and an oxygen gas within a processing vessel of a plasma processing apparatus; and a second plasma process of generating plasma of a second processing gas containing a hydrogen gas, nitrogen trifluoride gas and a carbon-containing gas within the processing vessel. A temperature of an electrostatic chuck is set to a first temperature in the first plasma process, and the temperature of the electrostatic chuck is set to a second temperature lower than the first temperature in the second plasma process.

A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films are alternately stacked, and a second region including a single-layered silicon oxide film is provided. The etching method includes a first plasma process of generating plasma of a first processing gas containing a fluorocarbon gas and an oxygen gas within a processing vessel of a plasma processing apparatus; and a second plasma process of generating plasma of a second processing gas containing a hydrogen gas, nitrogen trifluoride gas and a carbon-containing gas within the processing vessel. A temperature of an electrostatic chuck is set to a first temperature in the first plasma process, and the temperature of the electrostatic chuck is set to a second temperature lower than the first temperature in the second plasma process.

A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

The present invention relates to a multi-stage vacuum equipment, preferably a two-stage equipment, whose normal operation requires different pressures to be set, wherein the pressure variation may be achieved by a Shape Memory Alloy (SMA) wire movement of a suitable element. The invention further discloses a method for operating said multi-stage vacuum equipment controlled by a SMA actuator.

Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

The objective of the present invention is to maintain the surrounding of a sample at atmospheric pressure and efficiently detect secondary electrons. In a sample chamber of a charged particle device, a sample holder (4) has: a gas introduction pipe and a gas evacuation pipe for controlling the vicinity of a sample (20) to be an atmospheric pressure environment; a charged particle passage hole (18) and a micro-orifice (18) enabling detection of secondary electrons (15) emitted from the sample (20), co-located above the sample (20); and a charged particle passage hole (19) with a hole diameter larger than the micro-orifice (18) above the sample (20) so as to be capable of actively evacuating gas during gas introduction.

Methods and apparatus are disclosed for the preparation of microscopic samples using light pulses. Material volumes greater than 100 μm.sup.3 are removed. The methods include inspecting an object with a scanning electron microscope (SEM) or a focused ion beam (FIB). The inspection includes recording an image of the object. The methods also includes delineating within the object a region to be investigated, and delineating a laser-machining path based on the image of the object so that a sample can be prepared out of the object. The methods further include using laser-machining along the delineated laser-machining path to remove a volume that is to be ablated, and inspecting the object with the scanning electron microscope (SEM) or a focused ion beam (FIB).