An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.

The present invention relates to a method of automatically determining a measurement recipe for a feature, such as a dimension of a pattern formed on a workpiece, such as a wafer, a mask, a panel, or a substrate. This method includes: determining a type of a CAD pattern (101) and a measurement recipe based on a relative position of a measurement point (111) and the CAD pattern (101) on a coordinate system defined in design data, and an area of the CAD pattern (101); aligning a real pattern (121) on an image corresponding to the CAD pattern (101) with the CAD pattern (101); and measuring a feature of the real pattern (121) according to the determined measurement recipe.

The present application relates to a testing method for a packaged chip, a testing system for a packaged chip, a computer device and a storage medium. The method includes following steps: acquiring a target chip; in the post-burn-in test process, testing a first data retention time of each memory unit on the target chip; comparing the first data retention time of each memory unit with a preset reference time; and, determining that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time. In the present application, by testing the first data retention time of each memory unit on the target chip in the post-burn-in test process, it is determined that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time, and subsequent testing will be performed continuously. Moreover, since the products satisfying the requirements can be screened out in the bum-in test process, compared with the prior art, the test cost is reduced, and the test efficiency is improved.

A photovoltaic inspection system is provided, the photovoltaic inspection system detecting a failure by eliminating ON/OFF operation of a switch or others at the time of inspection or checkup as much as possible, reducing an influence of a temperature distribution as a whole with a small effort, and detecting a local deterioration in a photovoltaic module or string. According to a typical embodiment, in a photovoltaic system having a plurality of photovoltaic strings formed of one or a plurality of photovoltaic modules arranged to be aligned, a photovoltaic inspection system which detects the failure in the photovoltaic strings includes: a current detector which measures each of a first output current of a first photovoltaic string and a second output current of a second photovoltaic string; and a monitoring unit which calculates a second temperature property of the second photovoltaic string based on a value of the first output current and a value of the second output current and which determines whether the second photovoltaic string has the failure or not based on the second temperature property.

An interposer for inspecting reliability of a semiconductor chip is disclosed. The interposer for inspection includes: at least one active pad disposed in an active region of a first surface, and including: pads through which data and a control signal for testing an inspection target chip are received (input) and sent (output) during an active mode; and pads for receiving a power-supply voltage needed to operate the inspection target chip and the interposer during the active mode; at least one passive pad disposed in a passive region of the first surface, and including: pads receiving data for testing the inspection target chip during a passive mode, and a power-supply voltage needed to operate the inspection target chip and the interposer during the passive mode; and at least one bump pad disposed over a second surface facing the first surface, and to be coupled to the inspection target chip.

A contact terminal includes a tubular body and a first conductor. The tubular body has an end-side cutout provided in a shape cut out from one axial-direction end surface toward an other axial-direction side at one axial-direction end portion of the tubular body, a hole that is open at the one axial-direction end portion, and a pair of arms interposed between the end-side cutout and the hole. The first conductor includes a first insertion including an inclined portion having an outside diameter gradually increased toward one axial-direction side, and a first straight portion connected to the one axial-direction side of the inclined portion and having an outside diameter constant along the axial direction. The outside diameter of the first straight portion is larger than an inside diameter of the tubular body. The first straight portion is configured to be in contact with the pair of arms.

This method includes: generating a backscattered-electron image of a multilayered structure (400) including a plurality of patterns formed in a plurality of layers by a scanning electron microscope (50); classifying a plurality of regions of a virtual multilayered structure (300) including a CAD pattern created from design data of the plurality of patterns into a plurality of groups according to CAD pattern arrays in a depth direction of the virtual multilayered structure (1300); performing a matching between at least one of the plurality of patterns on the backscattered-electron image and a corresponding CAD pattern; calculating a brightness index value of a region on the backscattered-electron image corresponding to a region belonging to each group; and determining that there is a pattern defect in the region on the backscattered-electron image when the brightness index value is out of a standard range.

Systems, methods, and circuitries are provided for calibrating a heater used to heat an adjustable resistance network during a trimming procedure. In one example, a circuit is provided that includes an adjustable resistance network including first resistance segments; a heater element thermally coupled to the adjustable resistance network; a calibration resistor including second resistance segments thermally coupled to the first resistance segments; and interface circuitry coupled to the calibration resistor.

A probe card (10) includes a flexible substrate (114) and a rigid substrate (120). The flexible substrate (114) contacts an inspection object. The rigid substrate (120) is electrically connected to the flexible substrate (114). The flexible substrate (114) is located on a side of the rigid substrate (120) where the inspection object is located in a direction perpendicular to the rigid substrate (120).

Disclosed is a method of designing and fabricating a semiconductor chip including a fuse cell. The method may include preparing a semiconductor chip layout, the semiconductor chip layout including a main chip layout and a scribe lane layout enclosing the main chip layout; disposing a fuse layout in the scribe lane layout; setting the main chip layout as a first data preparation region; setting the scribe lane layout and the fuse layout as a second data preparation region; obtaining a first resulting structure and a second resulting structure, respectively, by performing a data preparation process on the first and second data preparation regions; merging the first and second resulting structures to generate mask data; manufacturing a photomask, based on the mask data; and forming semiconductor chips on a wafer using the photomask.