A layout of a driving circuit, a semiconductor structure and a semiconductor memory are provided. The layout includes P-type transistors, N-type transistors and four test modules. The four test modules are distributed on both sides of the P-type transistors and the N-type transistors in an upper-lower symmetrical structure, and the P-type transistors and the N-type transistors have an upper-lower structure distribution in the middle of the four test modules.

Described are memory systems and devices in which each memory die in a three-dimensional stack of memory dies includes drive and receive circuitry that can communicate data signals from the stack on behalf of all the memory dies in the stack. The drive and receive circuitry, if defective on one device in the stack, can be disabled and substituted with the drive and receive circuitry from another. The stack of memory dies can thus function despite a failure of drive or receive circuitry in one or more of the memory dies. Each memory die includes test circuitry to detect defective drive and receive circuitry.

Micro light emitting diode inspection and repairing equipment including a carrying stage, an optical inspection module and an injection device is provided. The optical inspection module is arranged corresponding to the carrying stage to capture image information and obtain a position coordinate from the image information. The injection device is adapted to move to a target position of the carrying stage according to the position coordinate. The injection device includes a tube and a nozzle. The tube includes a first portion and a second portion connected to the first portion. The extending direction of the first portion is different from the extending direction of the second portion. A fluid blows to the target position after passing through the tube and the nozzle. An inspection and repairing method adopting the micro light emitting diode inspection and repairing equipment is also provided.

A multi-electron beam inspection apparatus includes a multi-detector that includes a plurality of detection sensors each of which detects a secondary electron beam emitted due to that a target object is irradiated with a primary electron beam individually preset in multiple secondary electron beams emitted because the target object is irradiated with multiple primary electron beams, a reference image data generation circuit that generates reference image data of a position irradiated with each primary electron beam, based on design data serving as a basis of the pattern formed on the target object, a synthesis circuit that synthesizes, for each primary electron beam, the reference image data of the position irradiated with a primary electron beam concerned and portions of reference image data of positions irradiated with other primary electron beams different from the primary electron beam concerned, and a comparison circuit that compares synthetic reference image data having been synthesized, and secondary electron image data based on a value detected by the detection sensor which detects a secondary electron beam due to irradiation with the primary electron beam concerned.

A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a first stage to be able to move up to a first stroke by which an entire surface of an inspection region of the substrate can be irradiated with the multi-beams, a second stage, arranged on the first stage, to be able to move up to a second stroke sufficiently shorter than the first stroke and to place the substrate thereon, and a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams.

A plasma processing method is implemented by a plasma processing apparatus including a processing chamber, a lower electrode, a focus ring arranged around the lower electrode, an inner upper electrode arranged to face the lower electrode, an outer upper electrode electrically insulated from the inner upper electrode, a quartz member arranged between the inner and outer upper electrodes and above the focus ring, a gas supply unit for supplying gas to the processing chamber, a first high frequency power supply unit for applying a first high frequency power for plasma generation to the lower electrode or the inner and outer upper electrodes, a first direct current power supply unit for applying a variable first direct current voltage to the outer upper electrode, and a control unit. The method includes the control unit controlling the variable first direct current voltage to reduce an amount of change in a tilt angle.

Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

A method includes receiving one or more images of three or more die of a wafer, determining a median intensity value of a set of pixel intensity values acquired from a same location on each of the three or more die, determining a difference intensity value for the set of pixel intensity values by comparing the median intensity value of the set of pixel intensity values to each pixel intensity value, grouping the pixel intensity values into an intensity bin based on the median intensity value of the set of pixel intensity values, generating an initial noise boundary based on a selected difference intensity value in the intensity bin, generating a final noise boundary by adjusting the initial noise boundary, generating a detection boundary by applying a threshold to the final noise boundary, and classifying one or more pixel intensity values outside the detection boundary as a defect.

A test apparatus tests a wafer under test on which devices under test each including magnetoresistive memory or a magnetic sensor are formed. In a test process, the wafer under test is mounted on a stage. In the test process, a magnetic field application apparatus applies a magnetic field B.sub.EX to the wafer under test. A test probe card is used in the test process. Multiple magnetization detection units are formed on a diagnostic wafer. In a diagnostic process of the test apparatus, the diagnostic wafer is mounted on the stage instead of the wafer under test. Each magnetization detection unit is capable of measuring a magnetic field B.sub.EX generated by the magnetic field application apparatus. In the diagnostic process, the diagnostic probe card is used instead of the test probe card.

The test apparatus tests a wafer under test on which devices under test each including magnetoresistive memory or a magnetic sensor are formed. In a test process, the wafer under test is mounted on a stage. A test probe card is configured such that it can make probe contact with the wafer under test in the test process. A wafer connection HiFix is arranged between the test probe card and a test head. A magnetic field application apparatus is provided to the wafer connection HiFix. In the test process, the magnetic field application apparatus applies a magnetic field B.sub.EX to the wafer under test.