A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).

A fingerprint sensor is provided. The fingerprint sensor includes a multi-layer printed circuit board (PCB), a fingerprint sensing die and a molding compound. The multi-layer PCB includes a bottom dielectric layer, at least one intermediate dielectric layer disposed on the bottom dielectric layer, a top dielectric layer disposed on the intermediate dielectric layer and a trench. The trench is formed by digging out a portion of the intermediate dielectric layer and a portion of the top dielectric layer. The fingerprint sensing die is disposed in the trench of the multi-layer PCB and mounted on an upper surface of the bottom dielectric layer of the multi-layer PCB. The fingerprint sensing die includes a sensing array capable of sensing fingerprint information of a user. The fingerprint sensing die is covered by the molding compound, and the trench of the multi-layer PCB is filled with the molding compound.

Provided are a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, a main electrode terminal through which a main current of the power device flows, a sensor signal terminal which is connected to the sensor to receive a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal, the sensor signal terminal and the driving terminal each having a first terminal and a second terminal which are provided away from an inner side wall surface of the case, the first and second terminals electrically conducting to each other to form a double structure.

Sequential electrodeposition of metals into through-mask features on a semiconductor substrate is conducted such as to reduce the deleterious consequences of lipseal's pressure onto the mask material. In a first electroplating step, a first metal (e.g., nickel) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a first distance from the edge of the substrate. In a second electroplating step, a second metal (e.g., tin) is electrodeposited using a lipseal that has an innermost point of contact with the semiconductor substrate at a greater distance from the edge of the substrate than the first distance. This allows to at least partially shift the lipseal pressure from a point that could have been damaged during the first electrodeposition step and to shield from electrolyte any cracks that might have formed in the mask material during the first electroplating step.

A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.

An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.

Disclosed is a structure for preventing a leak at a synthetic resin tube joint, which includes a synthetic resin tube including a tapered portion at an end portion; a ferrule inserted into the end portion of the synthetic resin tube and including a tapered portion corresponding to the tapered portion of the synthetic resin tube; a fitting which accommodates the synthetic resin tube and the ferrule, and includes a tapered portion corresponding to the tapered portion of the synthetic resin tube and a protrusion formed on the tapered portion of the fitting, and a nut which engages with the fitting.

A leadframe includes a first die attach pad (“DAP”) having a first longitudinally extending edge surface and a second DAP having a first longitudinally extending edge surface. The second DAP is positioned with the first longitudinally extending edge surface thereof in adjacent, laterally and vertically spaced relationship with the first longitudinally extending edge surface of the first DAP.