The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

Systems and methods of securing an integrated circuit assembly includes: arranging a plurality of securing elements within a plurality of orifices fabricated within one or more layer components of a plurality of layer components of an integrated circuit assembly; applying a mechanical compression load against the integrated circuit assembly that uniformly compresses together the plurality of layer components of the integrated circuit assembly; after applying the mechanical compression load to the integrated circuit assembly, fastening the plurality of securing elements while the integrated circuit assembly is in a compressed state based on the mechanical compression load; and terminating the application of the mechanical compression load against the integrated circuit assembly based on the fastening of the plurality of securing elements.

A semiconductor device includes a cladding layer and a first optical waveguide. The first optical waveguide is formed on the first cladding layer. An end surface of the first optical waveguide is inclined relative to a vertical line perpendicular to an upper surface of the cladding layer.

A method of fabricating a semiconductor device is described. A semiconductor substrate having at least one electrical component is provided. A patterned wiring layer is formed above the semiconductor substrate. The patterned wiring layer includes a plurality of wiring portions, where adjacent of the wiring portions are separated from each other. A first insulating passivation layer is formed over the wiring portions in a region between adjacent wiring portions. The first insulating passivation layer has a horizontal surface in the region between adjacent wiring portions. A second insulating passivation layer is formed on the first insulating passivation layer, wherein the first insulating passivation layer has a side surface which makes an angle with the horizontal surface of greater than 103°.

In an embodiment, a memory system may include at least two types of DRAM, which differ in at least one characteristic. For example, one DRAM type may be a high density DRAM, while another DRAM type may have lower density but may also have lower latency and higher bandwidth than the first DRAM type. DRAM of the first type may be on one or more first integrated circuits and DRAM of the second type may be on one or more second integrated circuits. In an embodiment, the first and second integrated circuits may be coupled together in a stack. The second integrated circuit may include a physical layer circuit to couple to other circuitry (e.g. an integrated circuit having a memory controller, such as a system on a chip (SOC)), and the physical layer circuit may be shared by the DRAM in the first integrated circuits.

A film containing: a propenyl group-containing resin (A) including, at an end of a molecule, a constituent unit represented by the following formula (1); a radical polymerizable resin or compound (B) other than the propenyl group-containing resin (A); and a curing accelerator (C), wherein the radical polymerizable resin or compound (B) includes at least one selected from the group consisting of a maleimide group and a citraconimide group. In the formula (1), —* represents a bonding hand.

Various embodiments of the teachings herein include a semifinished product for use in the populating of a power electronics component by a connecting method. The product includes an electrically insulating prepreg frame electrically insulated. The prepreg frame is configured for surrounding an applied connecting material at a metallized installation site during the population. A material of the prepreg frame enables simultaneous processability of electrical connection and electrical insulation by compression of the insulation material in the form of the semifinished product since the processing parameters of the electrical connecting material and the semifinished product are compatible.

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that that comprises a transparent, translucent, non-opaque, or otherwise optically-transmissive, external surface.

A semiconductor element is bonded to a circuit pattern integrated with an insulating layer and a heat radiation fin, a case is bonded to a peripheral edge of the heat radiation fin so as to surround the semiconductor element, the circuit pattern, and the insulating layer, and a sealing resin is sealed in a region surrounded by the insulating layer, the circuit pattern, and the case. An internal electrode includes a flat plate-shaped portion, and is provided with a through hole and a pair of bent and inclined-shaped support portions. The support portion is bonded to the circuit pattern, and the upper surface of the semiconductor element, the through hole, and an embossed portion provided around the through hole are bonded. The internal electrode, and an external electrode integrally molded with the case, are bonded.

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A sacrificial layer above a second semiconductor layer at a first side of a substrate and a dielectric stack on the sacrificial layer are subsequently formed. A channel structure extending vertically through the dielectric stack and the sacrificial layer into the second semiconductor layer is formed. The sacrificial layer is replaced with a first semiconductor layer in contact with the second semiconductor layer. The dielectric stack is replaced with a memory stack, such that the channel structure extends vertically through the memory stack and the first semiconductor layer into the second semiconductor layer. A source contact is formed at a second side opposite to the first side of the substrate to be in contact with the second semiconductor layer.