A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

A solar panel that attains very low cost/Watt objectives is achieved by applying an optical concentrator with planar symmetry in combination with a simple 1-axis tracking system. The concentrator uses a Cassegrain optical system to provide moderate concentration factors that can be adjusted by varying the ratio of the focal lengths of the concave and convex reflecting surfaces. Concentrator dimensions can be scaled to any convenient size. They can be arrayed in parallel to form a solar panel that has the same form factor as a 1-sun solar panel. One-axis tracking is achieved by simply rotating the collector elements in synchronism so the sun is maintained in the plane of symmetry for each of the collector elements that comprise the panel.

In a solar cell module, a plurality of solar cells are provided between a front surface protection member and a back surface protection member and bus bar electrodes 20 of the plurality of solar cells are electrically connected to each other by wiring members. The solar cell module includes an adhesive layer made of a resin 60 containing a plurality of conductive particles 70, the adhesive layer provided between each of the bus bar electrodes 20 and the wiring member 40. Each of the bus bar electrodes 20 and the corresponding wiring member 40 are electrically connected by the plurality of conductive particles 70. The resin 60 covers side surface of each of the bus bar electrodes 20 and configured to bond the wiring member 40 with the surface of a photoelectric conversion body 10.

Improved BIPV materials configured to meet various long-term requirements including, among others, a high degree of water resistance, physical durability, electrical durability, and an ability to withstand variations in temperature and other environmental conditions. In some embodiments, the disclosed BIPV materials include modules wherein two or more layers of the module are configured to be joined together during lamination to protect edge portions of the top sheet and/or back sheet of the module, such as in the vicinity of any multi-layer vapor barrier structure(s) of the module.

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer comprising a substrate and an interconnect structure coupled to the substrate. The method includes removing a portion of the substrate from the first semiconductor wafer to expose a portion of the interconnect structure.

A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes an n-type layer and a p-type layer in contact with the n-type layer; a semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.

A staircase avalanche photodiode with a staircase multiplication region composed of an AlInAsSb alloy. The photodiode includes a buffer layer adjacent to a substrate and an avalanche multiplication region adjacent to the buffer layer, where the avalanche multiplication region includes a graded AlInAsSb alloy grown lattice-matched or psuedomorphically strained on either InAs or GaSb. The photodiode further includes a photoabsorption layer adjacent to the avalanche multiplication region, where the photoabsorption layer is utilized for absorbing photons. By utilizing AlInAsSb in the multiplication region, the photodiode exhibits a direct bandgap over a wide range of compositions as well as exhibits large conduction band offsets much larger than the smallest achievable bandgap and small valance band offsets. Furthermore, the photodiode is able to detect extremely weak light with a high signal-to-noise ratio.

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

The present invention provides a protective backing sheet for photovoltaic modules. The backing sheet has a layer including fluoropolymer which is cured on a substrate, and the layer includes a hydrophobic silica. The amount of hydrophobic silica contained in the layer is within the range of 2.5 to 15.0% by weight, and preferably in the range of 7.5 to 12.5%. Also, the layer including fluoropolymer may further include a titanium dioxide.

A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.