A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.

Disclosed are a solar cell including an upper cell includes an upper passivation layer disposed on an upper surface of a functional layer, a transparent electrode disposed on an upper surface of the upper passivation layer, an upper first charge transport layer disposed on an upper surface of the transparent electrode, an upper electrode disposed on the upper first of the transparent electrode to be adjacent to the upper surface charge transport layer, an upper second charge transport layer disposed on the upper surface of the functional layer to be spaced apart from the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper electrode, and an upper absorption layer disposed on the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper second charge transport layer.

Disclosed is a solar panel being divided into a plurality of cells and including: a light transmissive power generation region which is a central region in a diameter direction of a ring-shaped member and in which extending thin line power generators are arranged in parallel in a direction substantially orthogonal to the extending direction; and a periphery power generation region which is a periphery region of the light transmissive power generation region and in which a part of the cells is arranged along a circumferential direction. The cells include a composite cell including at least a part of the periphery power generation region and at least a part of the light transmissive power generation region. A first cell and a second cell different from the first cell are respectively arranged on one end side and on the other end side in the diameter direction of the ring-shaped member.

Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

A strip-shaped electrode sheet includes an electrode foil including a strip-shaped foil exposed portion in which the electrode foil is exposed, a strip-shaped active material layer extending in a longitudinal direction, and a strip-shaped insulator layer containing insulating resin and formed on an insulator-layer support portion along a one-side layer edge portion of the active material layer and between the foil exposed portion of the electrode foil and an active-material-layer support portion. The insulator layer is located lower than a top face of the active material layer toward the electrode foil and includes a slant coating portion covering at least a lower portion of a one-side slant portion of the active material layer and a foil coating portion extending from the slant coating portion in a width-direction one side and covering the insulator-layer support portion of the electrode foil.

The invention provides an optical sensor package. The optical sensor package includes: a substrate; a sensor disposed on the substrate; a glass cover disposed directly on the sensor; and a cap disposed on the substrate comprised of a solid perimeter surrounding the sensor and a ceiling having a cut-out section above the glass cover. The thickness of the cap is 0.20 mm.

Described herein is a printed photovoltaic cell comprising an anode; an LEP printed cathode; and an LEP printed photovoltaic layer disposed between the anode and the cathode. The photovoltaic layer comprises a material with a perovskite structure having a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6 and a thermoplastic resin comprising a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. The printed cathode comprises: a thermoplastic resin; and electrically conductive metal particles. Also described herein is a method of producing the printed photovoltaic cell and an ink set for use in the method.

Described herein is a liquid electrophotographic photovoltaic ink composition comprising: a dispersion of a material with a perovskite structure, a thermoplastic resin and conductive particles in a carrier liquid; wherein the material with a perovskite structure has a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6; wherein A is a cation, B is a cation and X is an anion; and wherein the thermoplastic resin comprises: a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. Also described is a method of producing a photovoltaic cell using the LEP ink and the printed cell produced by the method.