A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.

Provided are a solar cell superfine electrode transfer thin film, manufacturing method and application method thereof. The electrode transfer thin film sequentially includes from bottom to top a substrate, a release layer, a resin layer and a hot melt adhesive layer; the resin layer is formed with electrode trenches therein; the electrode trenches are formed with electrodes therein; superfine conductive electrodes are continuously prepared on a transparent thin film via a roll-to-roll nanoimprinting method, the width of an electrode wire being 2 μm-50 μm, and the width of a typical line being 10 μm-30 μm. Directly attach the superfine electrodes of the hot melt adhesive layer to a solar cell by peeling off the substrate material, and sintering at a high temperature to volatilize the hot melt adhesive layer material while retaining the electrodes, thus the electrodes are integrally transferred, without poor local transfer.

Passive radiative cooling structures and apparatus manufactured with such cooling structures conserve energy needs. A flexible film transparent to visible light incorporates particles at a volume percentage larger than 25% so as to absorb and emit infrared radiation at wavelengths where Earth's atmosphere is transparent. Another film transparent to visible light is thin and flexible and configured to absorb and emit infrared radiation at wavelengths where Earth's atmosphere is transparent, wherein etchings or depositions are present on one or both surfaces. A high efficiency cooling structure has an emissive layer sandwiched between a waveguide layer and a thermal conductive layer. A solar cell panel is covered by a transparent passive radiative cooling film. A container housing an active cooling unit incorporates passive radiative cooling structures on one or more exterior surfaces.

Passive radiative cooling structures and apparatus manufactured with such cooling structures conserve energy needs. A flexible film transparent to visible light incorporates particles at a volume percentage larger than 25% so as to absorb and emit infrared radiation at wavelengths where Earth's atmosphere is transparent. Another film transparent to visible light is thin and flexible and configured to absorb and emit infrared radiation at wavelengths where Earth's atmosphere is transparent, wherein etchings or depositions are present on one or both surfaces. A high efficiency cooling structure has an emissive layer sandwiched between a waveguide layer and a thermal conductive layer. A solar cell panel is covered by a transparent passive radiative cooling film. A container housing an active cooling unit incorporates passive radiative cooling structures on one or more exterior surfaces.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An optoelectronic package structure is provided. The optoelectronic package includes a carrier, an electronic component, a photonic component and a first power supply path in the carrier. The carrier includes a first region and the electronic component is disposed over the first region of the carrier. A first power supply path is electrically connects the electronic component.

A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

A semiconductor device includes a transfer substrate, an array of connecting structures, and an array of micro semiconductor elements. Each of the micro semiconductor elements has a semiconductor layered unit and at least one electrode. Each of the connecting structures interconnects a respective one of the micro semiconductor elements and the transfer substrate. In each of the micro semiconductor elements, the electrode is disposed on the semiconductor layered unit opposite to a respective one of the connecting structures. A width of at least a part of each of the connecting structures is smaller than a width of a connecting surface of the semiconductor layered unit of the respective one of the micro semiconductor elements. The connecting surface of the semiconductor layered unit of each of the micro semiconductor elements is connected to the respective one of the connecting structures.

An embodiment relates to an apparatus including first, second, and third electrodes and first and second transport media. The first electrode includes opposite first and second surfaces having first and second work function values, respectively. The second electrode includes a third surface facing the first surface and having a third work function value. The third electrode includes a fourth surface facing the second surface and having a fourth work function value. The third and fourth work function values are different than the first and second work function values. The third electrode is electrically coupled to the second electrode. The first transport medium is positioned between the first electrode and the second electrode and includes first nanoparticles. The second transport medium is positioned between the first electrode and the third electrode and includes second nanoparticles.

The photoelectric conversion layer of an embodiment is based on Cu.sub.2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.