A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Provided is a laminate with which an organic thin-film solar cell having excellent output characteristics, even in an LED light irradiation environment, can be obtained. A titanium oxide layer that serves as an electron transport layer and is positioned on a member that serves as an optically transparent electrode layer has a thickness of 1.0 nm to 60.0 nm, inclusive, and satisfies condition 1 or condition 2. Condition 1: The titanium oxide layer contains an indium metal and an indium oxide, wherein, if the content of elemental titanium is denoted as Ti, the content of the indium metal is denoted as InM, and the content of the indium oxide is denoted as InOx, the atomic ratio (InM/Ti) is 0.10 to 0.25, inclusive, and the atomic ratio (InOx/Ti) is 0.50 to 10.00, inclusive. Condition 2: The titanium oxide layer contains a tin metal and a tin oxide, wherein, if the content of the elemental titanium is denoted as Ti, the content of the tin metal is denoted as SnM, and the content of the tin oxide is denoted as SnOx, the atomic ratio (SnM/Ti) is 0.05 to 0.30, inclusive, and the atomic ratio (SnOx/Ti) is 0.50 to 10.00, inclusive.

A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.

Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

A flexible substrate has a major surface and a sensor attached to and aligned with the major surface of the substrate. The sensor may have an elastic body containing conductive nanotubes homogeneously distributed therein to form a conductive path and at least two electrodes in electrical connection with the conductive path. Balloons and flexible elements used in medical procedures are particularly useful.

This disclosure provides photovoltaic cells and substrates with three dimensional optical architectures and methods of manufacturing the same. In particular, the disclosure relates to a continuously formed photovoltaic substrate, and to systems, devices, methods and uses for such a product, including the collection of solar energy.

The present technology relates to a solid-state imaging device that can reduce the number of steps and enhance mechanical strength, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a laminate including a first semiconductor substrate having a pixel region and at least one second semiconductor substrate having a logic circuit, the at least one second semiconductor substrate being bonded to the first semiconductor substrate such that the first semiconductor substrate becomes an uppermost layer, and a penetration connecting portion that penetrates from the first semiconductor substrate into the second semiconductor substrate and connects a first wiring layer formed in the first semiconductor substrate to a second wiring layer formed in the second semiconductor substrate. The first wiring layer is formed with Al or Cu. The present technology is applicable, for example, to a back-surface irradiation type CMOS image sensor.