An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.

An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.

A method of liquid-mediated pattern transfer includes providing a substrate comprising (a) a semiconductor film adhered to the substrate and (b) a first patterned layer on the semiconductor film. The substrate is submerged in a delamination liquid, whereby the semiconductor film is delaminated from the substrate while the first patterned layer remains on the semiconductor film. A patterned semiconductor membrane ready for transfer is thus obtained. The patterned semiconductor membrane is transferred to a target substrate in a transfer liquid, and then the transfer liquid is removed (e.g., evaporated). The patterned semiconductor membrane adheres to the target substrate as the transfer liquid is removed.

Virus multilayers can be used as templates for growth of inorganic nanomaterials. For example, layer-by-layer construction of virus multilayers on functionalized surfaces form nanoporous structures onto which metal particles or metal oxide nanoparticles can be nucleated to result in an interconnected network of nanowires.

An epoxy compound including a 5-membered aromatic heterocyclic ring represented by Formula 1 or Formula 2, a composition prepared using the epoxy compound, a semiconductor device prepared using the epoxy compound, an electronic device prepared using the epoxy compound, an article prepared using the epoxy compound, and a method of preparing the article:

E1-(M1).sub.a1-(L1).sub.b1-M3-(L2).sub.b2-(M2).sub.a2-E2  Formula 1

E1-(M1).sub.a1-(L1).sub.b1-M3-(L2).sub.b2-(M2).sub.a2-(L5).sub.b5-A-(L6).sub.b6-(M4).sub.a3-(L3).sub.b3-M6-(L4).sub.b4-(M5).sub.a4-E2  Formula 2 wherein in Formulae 1 and 2, M1, M2, M3, M4, M5, M6, L1, L2, L3, L4, L5, L6, E1, E2, a1, a2, a3, a4, b1, b2, b3, b4, b5, and b6 are the same as those defined in the detailed description.

A light absorption material comprising: a compound having a perovskite crystal structure represented by ABX.sub.3 where the A site contains (NH.sub.2).sub.2CH.sup.+, the B site contains Pb.sup.2+, and the X site contains I.sup.−. A ratio of the number of atoms of I to the number of atoms of Pb measured by an X-ray photoelectron spectroscopy is 2.7 or less, or a ratio of the number of atoms of I to the number of atoms of Pb measured by a Rutherford backscattering spectroscopy is 2.9 or less.

A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90° when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.

A solar cell is discussed. The solar cell according to an embodiment includes a photoelectric conversion unit including a first conductive type region and a second conductive type region formed on the same side of the photoelectric conversion unit; and an electrode formed on the photoelectric conversion unit and including an adhesive layer formed on the photoelectric conversion unit and an electrode layer formed on the adhesive layer, wherein the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.