Related are a transfer member, a preparation method thereof and a transfer head having the same. The preparation method thereof includes the following operations: an inorganic substrate is provided, and a material for forming the inorganic substrate is selected from any one or more of a silicon-containing inorganic material, an III-V group compound semiconductor material, an II-VI group compound semiconductor material, and a metal material, herein, the hardness of metal is less than that of sapphire; a dry etching process is used to form a first microstructure on the surface of the inorganic substrate, to obtain a patterned substrate; an elastic glue layer is formed on a patterned surface of the patterned substrate, and the elastic glue layer has a second microstructure complementary to the first microstructure; the patterned substrate is removed, to obtain the transfer member.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

An embodiment discloses an ultraviolet light-emitting device including: a light-emitting structure including a plurality of light-emitting portions disposed on a first conductive type semiconductor layer, the plurality of light-emitting portions including an active layer and a second conductive type semiconductor layer; a first contact electrode disposed on the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; a first cover electrode disposed on the first contact electrode; and a second cover electrode disposed on the second contact electrode, wherein the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer, wherein the intermediate layer includes a first intermediate region disposed between the plurality of light-emitting portions, and a second intermediate region surrounding edges of the first conductive type semiconductor layer and connected to opposite ends of the plurality of first intermediate regions, wherein the first contact electrode includes a first sub-electrode disposed on the first intermediate region, and a second sub-electrode disposed on the second intermediate region.

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

The present invention provides a display device including a substrate, a wiring electrode disposed on the substrate, and a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and made of a mixture of conductive particles and an insulating material, and a light transmitting layer formed between the semiconductor light emitting devices. And the anisotropic conductive layer is formed in plurality, and any one of the plurality of anisotropic conductive layers is formed to surround one semiconductor light emitting device or to surround a plurality of semiconductor light emitting devices adjacent to each other.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.

A display device may include a substrate including pixel areas, and a pixel disposed in each of the pixel area. The pixel may include a transistor and a driving voltage line disposed in the substrate, first and second electrodes spaced apart from each other, a bank pattern disposed on the first and second electrodes, respectively, intermediate layers disposed on the bank pattern, light emitting elements disposed between two adjacent intermediate layers of the intermediate layers, a first contact electrode disposed on one of the two adjacent intermediate layers and electrically connected to an end of each of the light emitting elements, and a second contact electrode disposed on another one of the two adjacent intermediate layers and electrically connected to another end of each of the light emitting elements.

A display device is provided, a display device includes, a substrate including a first surface, a second surface opposite to the first surface, a first chamfered surface extending from one side of the first surface, a second chamfered surface extending from one side of the second surface, and a first side surface connecting the first chamfered surface and the second chamfered surface to each other, a first pad on the first surface, an upper via layer on the first surface and spaced from the first pad, and a first passivation layer partially covering the upper via layer, and defining a first exposure opening exposing one side of the upper via layer facing the first pad.

A display panel and a display device are provided. The display panel includes a substrate an array layer on the substrate; a display layer located on a side of the array layer away from the substrate, wherein the display layer includes a plurality of light-emitting devices; an optical layer located on a side of the display layer away from the array layer, wherein the optical layer includes a first optical structure, and the first optical structure is arranged corresponding to intervals between the plurality of light-emitting devices; and a first light-shielding member located on a side of the optical layer facing the substrate, wherein the first light-shielding member forms a light pass opening, and the light pass opening and the first optical structure overlap each other.