A display panel includes: a substrate including a first display area, a second display area, and a peripheral area; a first pixel circuit at the first display area and a first display element connected to the first pixel circuit; a second display element at the second display area; a second pixel circuit at on the peripheral area; a connection line between the substrate and the second display element and connecting the second display element to the second pixel circuit; and a connection portion on a different layer from the connection line and connected to the second display element, wherein the second display element includes a second pixel electrode, wherein the second pixel electrode is on a same layer as the connection portion and covers at least a portion of the connection portion.

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 10.sup.17 at/cm.sup.3. The electrically conductive layer may include doped diamond.

A display device includes a base substrate, a pixel defining film which is disposed on the base substrate and in which an opening is defined, a first electrode disposed on the base substrate and including a first surface facing the base substrate and a second surface opposite to the first surface and exposed in the opening, a light-emitting layer disposed on the first electrode in the opening, a hole transport region disposed between the first electrode and the light-emitting layer, an electron transport region disposed on the light-emitting layer, a second electrode disposed on the electron transport region and disposed extending above the pixel defining film, and a first auxiliary electrode disposed on the second electrode not to overlap the light-emitting layer and having a lower resistivity than a resistivity of the second electrode.

A light-emitting chip and a method for manufacturing the same are provided. Top surfaces of a first semiconductor layer (11), a first active layer (12), a second semiconductor layer (13) and a substrate (14) included in the light-emitting chip are located on a first horizontal plane, and bottom surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) included in the light-emitting chip are located on a second horizontal plane; and the top surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) serve as light-emitting surfaces.

A three-dimensional (3D) structure for optoelectronics including a pyramid made of a first InGaN-based material formed from a substrate, wherein the 3D structure includes a wire made of a second GaN-based material, different from the first material, the wire extending in a longitudinal direction perpendicular to the plane of the substrate between the substrate and a base of the InGaN-based pyramid, so that the 3D structure has the general shape of a pencil. One or more embodiments of the invention also relates to a method for manufacturing such a 3D structure, and an optoelectronic device based on a plurality of these 3D structures.

A curable silicone-(meth)acrylate pressure sensitive composition is curable via hydrosilylation reaction to form a silicone-(meth)acrylate pressure sensitive adhesive with an initial adhesion. When the silicone-(meth)acrylate pressure sensitive adhesive is exposed to actinic radiation, the resulting silicone-(meth)acrylate adhesive has a subsequent adhesion, which is higher than the initial adhesion.

Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.

Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, a component of a light emitting device can include a silver (Ag) portion, which can be silver on a substrate, and a protective layer disposed over the Ag portion. The protective layer can at least partially include an inorganic material for increasing the chemical resistance of the Ag portion.

Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.