An embodiment of the present disclosure provides a display module, including a display panel: a cover plate on a light-emitting side of the display panel; and a heat dissipation layer on a back side of the display panel. The back side faces away from the light-emitting side. Edges of the cover plate, the display panel and the heat dissipation layer are bent toward the back side of the display panel to form a shape-matched arc surface. The display panel further includes a planar portion and edges surrounding the planar portion. At least part of an edge of an orthographic projection of the display module on a plane where the planar portion of the display panel is located is arc. The heat dissipation layer includes a stretchable structure in an arc surface region having an arc edge.

A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

A display device includes a display panel and a repair panel overlapping a region of the display panel. The display panel includes: a substrate; a plurality of transistors on the substrate; and a first electrode connected to the transistors. The repair panel includes: a repair substrate; a plurality of connection electrodes extending through the repair substrate and on opposite surfaces of the repair substrate; a first repair electrode connected to the connection electrodes; a first repair emission layer on the first repair electrode; and a repair common electrode on the first repair emission layer. In a region where the display panel and the repair panel overlap each other, the first electrode and the first repair electrode are electrically connected to each other through the connection electrode.

A method for manufacturing a light-emitting element includes forming a first light-emitting part, forming a tunnel junction part on the first light-emitting part, and forming a second light-emitting part on the tunnel junction part. The step of forming the first light-emitting part includes forming a first layer with a first p-type impurity concentration at a first temperature, and forming a second layer with a second p-type impurity concentration on the first layer. The second p-type impurity concentration is greater than the first p-type impurity concentration. The step of forming the second light-emitting part includes forming a third layer with a third p-type impurity concentration at a second temperature and forming a fourth layer with a fourth p-type impurity concentration on the third layer. The fourth p-type impurity concentration is greater than the third p-type impurity concentration. The second temperature is less than the first temperature.

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a first electrode, a second electrode, and a first unit. The first unit is located between the first electrode and the second electrode, and the first unit has a function of emitting light. The first unit contains a light-emitting organic compound and an organic compound HRM. The organic compound HRM has four or more rotatable bonds and a principal moment of inertia. The principal moment of inertia includes a first normalized principal moment of inertia NPR1 and a second normalized principal moment of inertia NPR2 in a predetermined region.

A stretchable electronic device includes an array including at least two islands spaced apart from each other to dispose a device, and an interconnector to perform a stretchable action between the island, and an external connection to apply an electrical signal to the array.

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

A display device includes a first electrode and a second electrode disposed on a substrate, at least one light emitting element including a first semiconductor layer including a semiconductor of a first type, a second semiconductor layer including a semiconductor of a second type different from the first type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a third electrode disposed on the substrate and electrically connected to the second electrode. At least a portion of the third electrode is disposed between the first electrode and the second electrode in a plan view.

A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO.sub.2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al.sub.2O.sub.3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.