A circuit arrangement for measuring a load current provided to a load via a first load terminal of a load transistor is disclosed. In accordance with one example of the invention, the circuit arrangement includes a sense transistor coupled to the load transistor to provide a sense current representing the load current at a first load terminal of the sense transistor. The first load terminals of the load and the sense transistors are at respective floating electric potentials. A floating sense circuit coupled between the load terminals of sense transistor and load transistor, at least in one mode of operation the sense circuit receives the sense current and provides a floating signal representing the sense current. A non-floating measurement circuit is coupled to the sense circuit via a DC decoupling capacitor for transferring the floating signal representing the sense current to the non-floating measurement circuit. The measurement circuit is configured to provide an output signal representing the floating signal and thus the sense current.

A device that is capable of generating a new test pattern after the design phase and has a small area of a circuit not in use during normal operation includes a first circuit and a second circuit. The second circuit includes a third circuit and fourth circuit. The fourth circuit has a function of storing data for determining the configuration of the third circuit. When a test for the operating state of the first circuit is performed, the second circuit has a function of generating a signal for the test. When the test is not performed, the second circuit has a function of storing data used for processing in the first circuit and a function of comparing a plurality of signals.

The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includessequentially from one end to the other enda substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

A device for detecting a quench in a superconducting coil according to one aspect of the invention includes a first superconducting coil and a second superconducting coil that are connected in series. The first superconducting coil and the second superconducting coil have the same shape. A first axis of the first superconducting coil and a second axis of the second superconducting coil are arranged at the same position and in the same direction, and the position of the first superconducting coil and the position of the second superconducting coil in the direction of the first and second axes are the same. The length of a winding wire of the first superconducting coil and the length of a winding wire of the second superconducting coil are equal to each other.

A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

A device includes a sensor surface and a pair of electrodes. The sensor surface includes a first conductive layer separated from a second conductive layer by an intermediary layer, a magnetization direction of the first conductive layer and a magnetization direction of the second conductive layer having a ground state orientation of approximately 0 degrees. An electrical resistance between the pair of electrodes is determined by a magnetic field proximate the sensor surface.

The magnetic field in the vicinity of a conductor can be sensed by wire loops to measure the current in the nearby conductor. A sensor in a printed circuit board can detect and measure currents flowing through the PCB itself, yielding a thin, inexpensive, scalable solution for energy monitoring.

A method for determining at least one electrical property of an earth formation includes emitting an electromagnetic signal into the earth formation from an antenna and measuring an electromagnetic signal from the earth formation. The antenna is a broadband log antenna mounted on a substrate having at least a high dielectric permittivity, defined as a dielectric permittivity of about =100 to =1000 or a gigantic dielectric permittivity, defined as a dielectric permittivity of about =1000 or greater. The antenna has a radius between about 2.5 millimeters (mm) and 10 centimeters (cm). The method further includes determining at least one electrical property of one or more of a borehole, a borehole fluid, and the earth formation based on measuring the electromagnetic signal.