A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.

A lead-free solder ball is provided which suppresses interfacial peeling in a bonding interface of a solder ball, fusion defects which develop between the solder ball and solder paste, and which can be used both with Ni electrodes plated with Au or the like and Cu electrodes having a water-soluble preflux applied atop Cu. The lead-free solder ball for electrodes of BGAs or CSPs consists of 1.6-2.9 mass % of Ag, 0.7-0.8 mass % of Cu, 0.05-0.08 mass % of Ni, and a remainder of Sn. It has excellent resistance to thermal fatigue and to drop impacts regardless of the type of electrodes of a printed circuit board to which it is bonded, which are Cu electrodes or Ni electrodes having Au plating or Au/Pd plating as surface treatment.

A lead-free solder ball is provided which suppresses interfacial peeling in a bonding interface of a solder ball, fusion defects which develop between the solder ball and solder paste, and which can be used both with Ni electrodes plated with Au or the like and Cu electrodes having a water-soluble preflux applied atop Cu. The lead-free solder ball for electrodes of BGAs or CSPs consists of 1.6-2.9 mass % of Ag, 0.7-0.8 mass % of Cu, 0.05-0.08 mass % of Ni, and a remainder of Sn. It has excellent resistance to thermal fatigue and to drop impacts regardless of the type of electrodes of a printed circuit board to which it is bonded, which are Cu electrodes or Ni electrodes having Au plating or Au/Pd plating as surface treatment.

Emitter packages and LEDs displays utilizing the packages are disclosed, with the packages providing advantages such as reducing the cost and interconnect complexity for the packages and displays. One emitter package comprises a casing with a plurality of cavities, each cavity having at least one LED. A lead frame structure is included integral to the casing, with the at least one LED from each of the cavities mounted to the lead frame structure. The package is capable of receiving electrical signals for independently controlling the emission from a first and second of the cavities. One LED display utilizes the LED packages mounted in relation to one another to generate a message or image. The LED packages comprise multiple pixels each having at least one LED, with each package capable of receiving electrical signals for independently controlling the emission of at least a first and second of the pixels.

Emitter packages and LEDs displays utilizing the packages are disclosed, with the packages providing advantages such as reducing the cost and interconnect complexity for the packages and displays. One emitter package comprises a casing with a plurality of cavities, each cavity having at least one LED. A lead frame structure is included integral to the casing, with the at least one LED from each of the cavities mounted to the lead frame structure. The package is capable of receiving electrical signals for independently controlling the emission from a first and second of the cavities. One LED display utilizes the LED packages mounted in relation to one another to generate a message or image. The LED packages comprise multiple pixels each having at least one LED, with each package capable of receiving electrical signals for independently controlling the emission of at least a first and second of the pixels.