An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls of the first opening. One or more etch processes form one or more spacer-shaped structures along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

A method of forming conductive lines in a circuit is disclosed. The method includes arranging a plurality of signal traces in a first set of signal traces and a second set of signal traces, fabricating, using a first mask, a first conductive line for a first signal trace of the first set of signal traces and fabricating, using a second mask, a second conductive line for a second signal trace of the second set of signal traces. Each signal trace of the first set of signal traces has a first width. Each signal trace of the second set of signal traces has a second width different from the first width. The arranging is based on at least a length of a signal trace of the plurality of signal traces.

A method of forming conductive lines in a circuit is disclosed. The method includes arranging a plurality of signal traces in a first set of signal traces and a second set of signal traces, fabricating, using a first mask, a first conductive line for a first signal trace of the first set of signal traces and fabricating, using a second mask, a second conductive line for a second signal trace of the second set of signal traces. Each signal trace of the first set of signal traces has a first width. Each signal trace of the second set of signal traces has a second width different from the first width. The arranging is based on at least a length of a signal trace of the plurality of signal traces.

A method includes bonding a die to a substrate, where the substrate has a first redistribution structure, the die has a second redistribution structure, and the first redistribution structure is bonded to the second redistribution structure. A first isolation material is formed over the substrate and around the die. A first conductive via is formed, extending from a first surface of the substrate, where the first surface is opposite the second redistribution structure, the first conductive via contacting a first conductive element in the second redistribution structure. Forming the first conductive via includes patterning an opening in the substrate, extending the opening to expose the first conductive element, where extending the opening includes using a portion of a second conductive element in the first redistribution structure as an etch mask, and filling the opening with a conductive material.

A method includes bonding a die to a substrate, where the substrate has a first redistribution structure, the die has a second redistribution structure, and the first redistribution structure is bonded to the second redistribution structure. A first isolation material is formed over the substrate and around the die. A first conductive via is formed, extending from a first surface of the substrate, where the first surface is opposite the second redistribution structure, the first conductive via contacting a first conductive element in the second redistribution structure. Forming the first conductive via includes patterning an opening in the substrate, extending the opening to expose the first conductive element, where extending the opening includes using a portion of a second conductive element in the first redistribution structure as an etch mask, and filling the opening with a conductive material.

A semiconductor module includes a baseplate, a cover element attached to the baseplate so that detaching the cover element from the baseplate requires material deformations, and a semiconductor element in a room defined by the baseplate and the cover element. The semiconductor element is in a heat conductive relation with the baseplate and an outer surface of the baseplate is provided with laser machined grooves suitable for conducting heat transfer fluid. The laser machining makes it possible to make the grooves after the semiconductor module has been assembled. Therefore, regular commercially available semiconductor modules can be modified, with the laser machining, to semiconductor modules as disclosed.

A semiconductor module includes a baseplate, a cover element attached to the baseplate so that detaching the cover element from the baseplate requires material deformations, and a semiconductor element in a room defined by the baseplate and the cover element. The semiconductor element is in a heat conductive relation with the baseplate and an outer surface of the baseplate is provided with laser machined grooves suitable for conducting heat transfer fluid. The laser machining makes it possible to make the grooves after the semiconductor module has been assembled. Therefore, regular commercially available semiconductor modules can be modified, with the laser machining, to semiconductor modules as disclosed.

A gel is provided which is the condensation reaction product of the following composition: (i) at least one condensation curable silyl terminated polymer having at least one hydrolysable and/or hydroxyl functional group(s) per molecule; (ii) a cross-linker selected from the group of a silicone, an organic polymer, a silane or a disilane molecule which contains at least two hydrolysable groups per molecule; and (iii) a condensation catalyst selected from the group of titanates, zirconates or tin (II). The molar ratio of hydroxyl and/or hydrolysable groups in polymer (i) to hydrolysable groups from component (ii) is between 0.5:1 and 1:1 using a monosilane cross-linker or 0.75:1 to 3:1 using disilanes, and the molar ratio of M-OR or tin (II) functions to the hydroxyl and/or hydrolysable group(s) in polymer (i) is comprised between 0.01:1 and 0.5:1, where M is titanium or zirconium. The composition, and uses for the gel are also disclosed.