Patent classifications
H01P3/00
MAGNETIC DETECTOR, TRANSMISSION LINE AND MAGNETIC DETECTION METHOD
The magnetic detector 1 according to the present disclosure includes a transmission line 10 having a linear first conductor 11 including a magnetic material, a signal generator 30 configured to input a pulse as an incident wave to the transmission line 10, and a calculator 20 configured to detect a reflected wave caused by impedance mismatching at a magnetic field application position of the transmission line 10 and the incident wave. The calculator 20 calculates a position and a strength of the magnetic field applied to the transmission line 10 on the basis of the incident wave and the reflected wave.
TRANSMISSION LINE SUBSTRATE AND STRUCTURE OF MOUNTING TRANSMISSION LINE SUBSTRATE
A transmission line substrate includes a line portion and a connecting portion. The transmission line substrate includes a base material, a first ground conductor, a second ground conductor, a signal line, an external electrode, a second interlayer connection conductor. In the line portion, a transmission line having a strip line structure including the signal line, the first ground conductor, and the second ground conductor is provided. In the connecting portion, the signal line and the external electrode face each other in a stacking direction, without including therebetween an interlayer connection conductor. The second interlayer connection conductor surrounds a facing portion in which the signal line and the external electrode face each other in the Z-axis direction.
SUPERCONDUCTING BILAYERS OF TWO-DIMENSIONAL MATERIALS WITH INTEGRATED JOSEPHSON JUNCTIONS
Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.
Transmission line and air bridge structure
An object is to provide a transmission line having an air bridge structure in which grounding conductors of a transmission line are connected by wiring and which is stable in terms of mechanical strength by lowering an electrostatic capacitance in a region where the wirings connecting the central conductor and the grounding conductor intersect with each other. The transmission line includes a substrate, a first central conductor and a second central conductor that are formed on a surface of the substrate, a third central conductor that has a first erection portion and a second erection portion erected on the surface, and a first grounding conductor and a second grounding conductor. The transmission line further includes a third grounding conductor connecting the first grounding conductor and the second grounding conductor. The third central conductor and the third grounding conductor form an air bridge structure.
MULTILAYER SUBSTRATE
A multilayer substrate includes an insulator that includes a first region and a second region that is thinner than the first region, and a first signal line and a second signal line that are structured to extend across the first region and the second region. In a region in which the first signal line and the second signal line face each other, a line width of the first signal line and a line width of the second signal line are smaller in the second region than in the first region, and a distance between the first signal line and the second signal line is smaller in the second region than in the first region.
Single metal cavity antenna in package connected to an integrated transceiver front-end
Embodiments include semiconductor packages and methods of forming the semiconductor packages. A semiconductor package includes a die over a substrate, a first conductive layer over the die, and a conductive cavity antenna over the first conductive layer and substrate. The conductive cavity antenna includes a conductive cavity, a cavity region, and a plurality of interconnects. The conductive cavity is over the first conductive layer and surrounds the cavity region. The semiconductor package also includes a second conductive layer over the conductive cavity antenna, first conductive layer, and substrate. The conductive cavity extends vertically from the first conductive layer to the second conductive layer. The cavity region may be embedded with the conductive cavity, the first conductive layer, and the second conductive layer. The plurality of interconnects may include first, second, and third interconnects. The first interconnects may include through-mold vias (TMVs), through-silicon vias (TSVs), conductive sidewalls, or conductive trenches.
Systems and processes for increasing semiconductor device reliability
A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.
TRANSMISSION LINE AND ELECTRONIC DEVICE
A transmission line includes an element body, a signal conductor layer, and a ground conductor layer. The element body includes an insulator layer. The signal conductor layer is below the insulator layer, and the ground conductor layer is above the insulator layer in an element body up-down direction. A hole is located at a surface of the insulator layer and penetrates the insulator layer in the element body up-down direction. At least a portion of the hole overlaps the signal conductor layer when viewed in the element body up-down direction. The hole extends between a left hole-defining surface and a right hole-defining surface. In a cross section orthogonal to the element body front-back direction, the left hole-defining surface includes a left upper end and a left lower end in the element body left-right direction, and the right hole-defining surface includes a right upper end and a right lower end in the element body left-right direction.
PACKAGE FOR MILLIMETER WAVE MOLECULAR CLOCK
In a described example, an apparatus includes: a package substrate having a device side surface and a board side surface opposite the device side surface; a physics cell mounted on the device side surface having a first end and a second end; a first opening extending through the package substrate and lined with a conductor, aligned with the first end; a second opening extending through the package substrate and lined with the conductor, aligned with the second end; a millimeter wave transmitter module on the board side, having a millimeter wave transfer structure including a transmission line coupled to an antenna aligned with the first opening; and a millimeter wave receiver module mounted on the board side surface of the package substrate and having a millimeter wave transfer structure including a transmission line coupled to an antenna for receiving millimeter wave signals, aligned with the second opening.
Metamaterial-boosted quantum electromechanical transducer for microwave-optical interfacing
A quantum computing transducer having a dense, tunable superconducting metamaterial transmission line (SMTL) spectrum that can resonantly enhance sideband scattering. The resonant enhancement of scattering boosts the scattering rate, and hence also the microwave-to-optical-interface (MOQI) transduction efficiency. Moreover, the integration of mechanical elements with the SMTL to realize the MOQI yields a platform that can be readily interfaced on chip, such as in an integrated circuit, with superconducting-qubit architectures to facilitate the local implementation of two of the essential functionalities required for a quantum repeater, i.e., data egress/ingress and a quantum processing module.