A semiconductor device package includes a substrate and a conductive lid. The conductive lid is disposed within the substrate. The conductive lid defines a waveguide having a cavity. The waveguide is configured to transmit a signal from a first electronic component to a second electronic component through the cavity.

Novel tools and techniques are provided for implementing mixed dielectric materials for improving signal integrity of integrated electronics packages or semiconductor packages. In various embodiments, a substrate for a semiconductor device includes: a first layer made of a first material; a second layer made of a second material; and a third layer disposed between the first and second layers, and that is made of a third material different from the first and second materials. In some cases, the first, second, and third layers each contains a plurality of gas-filled regions (e.g., but not limited to, an aerogel core of the third layer and/or polymer resin matrix embedded with hollow silica spheres or aerogel spheres of the first and second layers, or the like). Coaxial ground shields around signal lines in the substrate can be used to improve signal integrity. High dielectric constant lossy lines between signal lines can reduce crosstalk.

A feeding structure is provided. The feeding structure includes a feeding unit, which includes: a reference electrode, first and second substrates opposite to each other, and a dielectric layer between the first and second substrates. The first substrate includes a first base plate and a first electrode thereon. The first electrode includes a first main body and a plurality of first branches connected to the first main body and spaced apart from each other. The second substrate includes a second base plate and a second electrode thereon. The second electrode includes a second main body and a plurality of second branches, which are connected to the second main body, spaced apart from each other, and in one-to-one correspondence with the plurality of first branches. Orthographic projections of each second branch and a corresponding first branch on the first base plate partially overlap each other.

A feeding structure is provided. The feeding structure includes a feeding unit, which includes: a reference electrode, first and second substrates opposite to each other, and a dielectric layer between the first and second substrates. The first substrate includes a first base plate and a first electrode thereon. The first electrode includes a first main body and a plurality of first branches connected to the first main body and spaced apart from each other. The second substrate includes a second base plate and a second electrode thereon. The second electrode includes a second main body and a plurality of second branches, which are connected to the second main body, spaced apart from each other, and in one-to-one correspondence with the plurality of first branches. Orthographic projections of each second branch and a corresponding first branch on the first base plate partially overlap each other.

A transmission path design assistance system assisting in the design of a transmission path with different reflection specification values for each frequency is obtained. The transmission path design assistance system includes: an acquisition unit to acquire reflection specification values of a reflection characteristic of a transmission path to be designed and a constraint of characteristic impedance distribution of the transmission path; and a computation processing unit including: a reflection characteristic calculation unit to calculate the reflection characteristic from inputted characteristic impedance distribution; a reflection characteristic modification unit to modify, on the basis of the reflection specification values acquired by the acquisition unit, the reflection characteristic calculated by the reflection characteristic calculation unit; a characteristic impedance distribution calculation unit to calculate characteristic impedance distribution from the reflection characteristic modified by the reflection characteristic modification unit; and a characteristic impedance distribution modification unit to modify, on the basis of the constraint acquired by the acquisition unit, the characteristic impedance distribution calculated by the characteristic impedance distribution calculation unit and output it to the reflection characteristic calculation unit.

An elongate flexible waveguide section for radio frequency signals is provided, wherein the waveguide section is corrugated in the longitudinal direction, and the waveguide section is at least partially corrugated in a circumferential direction perpendicular to the longitudinal direction. Also provided is an apparatus for connecting a VHTS antenna system to a spacecraft.

Provided is a metal joint (5) including: a Ag—Cu—Zn layer (7); and Cu—Zn layers (6) joined to both surfaces of the Ag—Cu—Zn layer (7), wherein the Ag—Cu—Zn layer (7) has a composition in which a Cu component is 1 atm % or more and 10 atm % or less, a Zn component is 1 atm % or more and 40 atm % or less, and the balance is a Ag component with respect to the total 100 atm %, and wherein the Cu—Zn layers (6) have a composition in which a Zn component is 10 atm % or more and 40 atm % or less and the balance is a Cu component with respect to the total 100 atm %. It is therefore possible to obtain the metal joint (5), which is capable of joining metal base materials to each other without being limited to aluminum-based materials, and also have high mechanical strength.

A qubit device includes an elongated thin film uninterrupted by Josephson junctions, a quantum device in electrical contact with a proximal end of the elongated thin film, and a ground plane that is co-planar with the elongated thin film and is in electrical contact with a distal end of the elongated thin film, in which the thin film, the quantum device, and the ground plane comprise a material that is superconducting at a designed operating temperature.

An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.

A radio frequency (RF) device includes a chip comprising a plurality of vias and at least a hot via; a signal lead and a ground lead disposed under a back side of the chip; and a signal metal sheet, a first ground metal sheet and a second ground metal sheet disposed on a top side of the chip. The signal metal sheet crosses over the first gap formed between the signal lead and the ground lead. The first ground metal sheet and the second ground metal sheet are coupled to the ground lead through the plurality of vias. The first ground metal sheet and the second ground metal sheet substantially surround the signal metal sheet.