An RF circulator in combination with a RF integrated circuit, the RF integrated circuit having a plurality of RF waveguide or waveguide-like structures in or on the RF integrated circuit, the RF circulator comprising a disk of ferrite material disposed on a metallic material disposed on or in the RF integrated circuit, the disk of ferrite material extending away from the RF integrated circuit when disposed thereon, the metallic portion having a plurality of apertures therein adjacent the disk of ferrite material which, in use, are in electromagnetic communication with the disk of ferrite material and with the plurality of RF waveguide or waveguide-like structures, the disk of ferrite material being disposed in a metallic cavity.

A microwave or radio frequency (RF) device includes a substrate including an electrically insulating material. The substrate has a first surface and a second surface parallel to the first surface. The device further includes a RF component disposed over the first surface of the substrate. The device also includes a conductive layer disposed over the second surface of the substrate, the conductive layer forming a ground plane electrically insulated from the RF component. The device further includes a defected ground structure disposed on a surface of the substrate that is coplanar with the first surface, where the defected ground structure is electrically connected to the conductive layer, and where the defected ground structure includes a plurality of laterally extending members adjacent to the RF component and extending laterally in relation to the RF component.

A quantum computing device includes: a first array of qubits arranged along a first axis; and a second array of qubits arranged along a second axis different from the first axis so that the qubits of the second array intersect with the qubits of the first array to form a lattice structure, in which each qubit in the first array is offset along the second axis relative to a directly adjacent qubit in the first array, each qubit in the second array is offset along the first axis relative to a directly adjacent qubit in the second array, and each intersection between a qubit from the first array and a qubit from the second array in the lattice structure comprises a coupler arranged to inductively couple the qubit from the first array to the qubit from the second array.

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

Circuits and methods include transmission lines formed from a conductive cladding on a substrate surface. The transmission line includes additional reference conductors positioned co-planar on the surface, including a gap between the transmission line and each of the reference conductors. The transmission line and the reference conductors are at least partially encapsulated (e.g., sandwiched) between two substrates. Isolation boundaries may be included as ground planes, e.g., above and below the transmission line, on opposing surfaces of the substrates, and Faraday walls, e.g., vertically, through the substrates. Current densities generated by various electromagnetic signals are distributed among the transmission line and the reference conductors (as a tri-conductor arrangement), and may be partially further distributed to the isolation (ground) boundaries.

A first RF module has a port, such port having a first signal conductor and a first ground plane conductor. A second RF module has a port spaced from the port of the first RF module and having a second signal conductor and a second ground plane conductor. A ground bridging conductor, bridging a space between the ports of the first and second RF modules, has a first end connected to the first ground plane conductor and a second end connected to the second ground plane conductor. A signal bridging conductor, bridging the space between ports of the first and second RF modules has a first end connected to the first signal conductor and second end connected to the second signal conductor. A capacitor is connected between the ground plane bridging conductor and one of the first ground plane conductor and the second ground plane conductor.

A coaxial power sensor assembly configured to provide a broadband matched termination utilizing coplanar waveguide topology while simultaneously providing a source of heat energy for a surface mount chip thermistor element to measure applied input power. The coaxial thermal power sensor is comprised of a thin film resistive device on a dielectric substrate and a surface mount chip thermistor element placed in close planar proximity to the resistive device in order to maximize the heat flux via a closely coupled thermal path to the thermistor and alter the bias current through the resistance to be measured. The power sensor is intended to function from DC to 70 GHz, but the same should not be construed as a limitation.

An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.

Disclosed is a capacitive non-directional coupler having a non-directional coupler printed circuit board (PCB) and a capacitive attenuator. The non-directional coupler PCB includes a coupler section configured to carry energy travelling on a main transmission line. The non-directional coupler PCB and the capacitive attenuator are configured as a capacitive voltage divider, and provide a sample of the energy on the main transmission line. Also disclosed is a method for measuring for measuring RF power using an RF power sensor having the capacitive non-directional coupler that includes with the non-directional coupler printed circuit board and the capacitive attenuator. Also disclosed is an RF power metering system that includes an RF power sensor having the capacitive non-directional coupler.

Disclosed is a capacitive non-directional coupler having a non-directional coupler printed circuit board (PCB) and a capacitive attenuator. The non-directional coupler PCB includes a coupler section configured to carry energy travelling on a main transmission line. The non-directional coupler PCB and the capacitive attenuator are configured as a capacitive voltage divider, and provide a sample of the energy on the main transmission line. Also disclosed is a method for measuring for measuring RF power using an RF power sensor having the capacitive non-directional coupler that includes with the non-directional coupler printed circuit board and the capacitive attenuator. Also disclosed is an RF power metering system that includes an RF power sensor having the capacitive non-directional coupler.