Embodiments described herein may be related to apparatuses, processes, and techniques related creating millimeter wave components within a glass core of a substrate within a semiconductor package. These millimeter wave components, which include resonators, isolators, directional couplers, and circulators, may be combined to form other structures such as filters or multiplexers. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to creating coaxial structures within glass package substrates. These techniques, in embodiments, may be extended to create other structures, for example capacitors within glass substrates. Other embodiments may be described and/or claimed.

A three dimensional (3D) inductor is described. The 3D inductor includes a first plurality of micro-through substrate vias (TSVs) within a first area of a substrate. The 3D inductor also includes a first trace on a first surface of the substrate, coupled to a first end of the first plurality of micro-TSVs. The 3D inductor further includes a second trace on a second surface of the substrate, opposite the first surface, coupled to a second end, opposite the first end, of the first plurality of micro-TSVs.

Embodiments described herein may be related to apparatuses, processes, and techniques related to contactless transmission within a package that combines radiating elements with vertical transitions in the package, in particular to a waveguide within a core of the package that is surrounded by a metal ring. A radiating element on one side of the substrate core and above the waveguide surrounded by the metal ring communicates with another radiating element on the other side of the substrate core and below the waveguide surrounded by the metal ring. Other embodiments may be described and/or claimed.

A waveguide based variable attenuator device including one or more attenuators each including a porous dielectric material; and a metal coating on the top of the dielectric material; and an actuator coupled to the attenuator. The actuator is configured to position, with nanometer resolution, the one or more attenuators in a waveguide configured and dimensioned to guide an electromagnetic wave having a frequency in a range of 100 gigahertz (GHz) to 1 terahertz (THz). The actuator controls at least one of a position or a volume of the one attenuator inserted in the waveguide to achieve a variable or pre-determined attenuation of the electromagnetic wave transmitted through waveguide.

A waveguide based variable attenuator device including one or more attenuators each including a porous dielectric material; and a metal coating on the top of the dielectric material; and an actuator coupled to the attenuator. The actuator is configured to position, with nanometer resolution, the one or more attenuators in a waveguide configured and dimensioned to guide an electromagnetic wave having a frequency in a range of 100 gigahertz (GHz) to 1 terahertz (THz). The actuator controls at least one of a position or a volume of the one attenuator inserted in the waveguide to achieve a variable or pre-determined attenuation of the electromagnetic wave transmitted through waveguide.

A broadband microstrip ferrite circulator or isolator includes a carrier. The broadband microstrip ferrite circulator or isolator further includes a dielectric substrate having an opening therein. The broadband microstrip ferrite circulator or isolator further includes a ferrite disc positioned within the opening of the dielectric substrate. The broadband microstrip ferrite circulator or isolator further includes a conductor having three contacts extending therefrom, the conductor being positioned on the ferrite disc. The broadband microstrip ferrite circulator or isolator further includes a magnet. The broadband microstrip ferrite circulator or isolator further includes a spacer positioned between the conductor and the magnet.

A phase shifter, a manufacture method for manufacturing a phase shifter, a drive method for driving a phase shifter, and an electronic device are provided. The phase shifter includes a dielectric substrate, and a transmission line, a dielectric layer, an insulating layer, and a metal layer on the dielectric substrate. In a direction perpendicular to a first surface of the dielectric substrate, the dielectric layer and the insulating layer are between the metal layer and the transmission line, a material of the dielectric layer is a semiconductor material; and an orthographic projection of the metal layer on the dielectric substrate, an orthographic projection of the insulating layer on the dielectric substrate, and an orthographic projection of the dielectric layer on the dielectric substrate at least partially overlap. The present disclosure provides a new phase shifter based on a metal-insulator-semiconductor capacitor structure.

A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.

An electronic device and a method for manufacturing such an electronic device are described. The electronic device includes an electronic component, and a component carrier in which the electronic component is embedded. The component carrier includes a first component carrier part having a first cut-out portion and a second component carrier part having a second cut-out portion, the first cut-out portion and the second cut-out portion facing opposite main surfaces of the electronic component. An electrically conductive material is provided on the surface of the first cut-out portion and on the surface of the second cut-out portion. The first cut-out portion and the second cut-out portion respectively form a first cavity and a second cavity on opposite sides of the electronic component.